Abstract:Three ion-typed surfactants, including anionic sodium dihexyl sulfosuccinate (SDSS), cationic ammonium salt of poly(ethylene glycol) (ASPEG) and non-ionic poly(ethylene glycol) (PEG), were added to 10 wt% tetramethyl ammonium hydroxide water (TMAHW) solutions to evaluate the silicon anisotropic etching properties of the (1 0 0) silicon plane without agitation and no isopropyl alcohol (IPA) additive. The results indicate that the wetting capacity of the etchants cause the efficacies of the etchants on the roughness reduction to follow the order cationic ASPEG, non-ionic PEG, pure solution and anionic SDSS in TMAHW solutions, especially at high etching temperatures. Moreover, the chemical activities of the etchants cause the efficacies of the etchants on the etching rates to follow the order anionic SDSS, pure solution, cationic ASPEG and non-ionic PEG in TMAHW solutions at a given etching temperature. The cationic ASPEG has a reasonable etching rate of 0.7 µm min−1 and the lowest surface roughness of 4 nm in TMAHW solutions at an etching temperature of 100 °C. ASPEG and PEG in TMAHW solutions markedly affect aluminum passivation. The undercutting of the convex corners in PEG-added TMAHW solutions can be drastically reduced without using corner compensation; the undercutting ratio obtained using a PEG surfactant is about 45% lower than that obtained in pure TMAHW solution. This finding reveals that non-ionic PEG should be added to TMAHW solutions when accurate profiles are required without extremely deep etching. This study also demonstrated that non-ionic PEG is more appropriate than IPA for anisotropic silicon TMAHW etching.

Influences of Temperature and Concentrations on Morphology of Tmah Anisotropic Etching for Silicon Microchannel Plate

Morphological and crystallographic evolution of patterned silicon substrate etched in TMAH solutions

Influences of Temperature and Etching Voltage on the Surface Morphology of Photo-Electro-Chemical Etching for Silicon Microchannel Arrays

Effect of additives on the anisotropic etching of silicon by using a TMAH based solution

Influence of Surfactant on Aperture of Photo-Electro-chemical Etching for Silicon Microchannel Plate

A Simple Texturization Approach for Mono-Crystalline Silicon Solar Cell with Low Tmah Concentration Solution

Texturization of Mono-Crystalline Silicon Solar Cells in TMAH Without the Addition of Surfactant

Photo-electrochemical Etching of Macroporous Silicon Arrays Used in Silicon Microchannel Plates

Study on anisotropic silicon etching characteristics in various surfactant-added tetramethyl ammonium hydroxide water solutions

Effects of IPA on texturing process for mono-crystalline silicon solar cell in TMAH solution

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Wet Etch Rate Behavior of Poly-Si in TMAH Solution at Various Ambient Gas Conditions

Study of anisotropic etching of (1 0 0) Si with ultrasonic agitation

Effects of etching conditions on surface morphology of periodic inverted trapezoidal patterned Si(100) substrate

Anisotropic etching of Si

Optimization of (100)-Si TMAH Etching for Uncooled Infrared Detector

Study of the Relationship Between Metal-Assisted Chemical Etching and Direction of the Applied Electric Field

Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

Optimization of Metal-Assisted Etchant Components for Fabrication of Porous Silicon

Study of under Etching Characters of Si (100) in Surfactant Added Tmah

Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer