Abstract:As the downscaling of gate oxides continues, trap density in the oxide bulk will reduce, but positive charges formed near to the SiO2/Si interface become relatively important. For gate oxides used in industry, hole trapping is the most important process for positive charge formation. Apart from as-grown hole traps, we recently reported that new hole traps were generated by electrical stresses. Information on these hole traps, however, is still limited. In part I of this work, properties of both generated and as-grown hole traps are investigated. For the first time, it will be clearly shown that generated hole traps consist of two components; cyclic positive charges (CPC) and antineutralization positive charges (ANPC). The charging and discharging rates of CPC are similar, while the neutralization of ANPC is much more difficult than its charging. Differences between them are also observed in generation kinetics and dependence on measurement temperature. Efforts will be made to explain their differences in terms of energy levels and to link them with positive charges reported in earlier works. We will also show that as-grown traps, regardless their distance from the interface, are not responsible for either ANPC or CPC. This is to say that generated hole traps are not the same as as-grown traps and their differences will be highlighted. In part II, hole trap generation mechanisms will be investigated.

Non-Uniform Distribution of Electron Traps Generated by FN Stress in Silicon Dioxides

Non-uniform distribution of electron traps generated by fowler-nordheim stress in silicon dioxides

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Electrical Signature of the Defect Associated with Gate Oxide Breakdown

Energy Levels of Interface States Generated in N-Mosfets by Hot-Carrier Stresses

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Investigation of Interface Traps at Si/SiO2 Interface of SOI Pmosfets Induced by Fowler–Nordheim Tunneling Stress Using the DCIV Method

Characterization of Electron Traps in Si-Capped Ge MOSFETs with $\hbox{hfo}_{2}/\hbox{sio}_{2}$ Gate Stack

Hole traps in silicon dioxides. Part I. Properties

Oxide Trap Relaxation Spectroscopy: A New Difference Method to Determine Trap in Oxidized Silicon

Hole-traps in Silicon Dioxides. Part II. Generation Mechanism

Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

Hole Trap Generation in Gate Dielectric During Substrate Hole Injection

Investigation on the Lateral Trap Distributions in Nanoscale MOSFETs During Hot Carrier Stress

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

Trap Generation in Whole Gate Stacks of FeFET with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

Extracting F-N Stress-Induced Interface States In Soinmosfet'S By Forward Gated-Diode

Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor

Extracting F-N stress-induced interface states in SOI NMOSFETs by forward gated-diode

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs