Tunable Silicon Slot Micro-Ring Operating at 1000Nm

XiangdongLi,Xue Feng,Xian Xiao,YihangLi,Kaiyu Cui,Yidong Huang

DOI: https://doi.org/10.1109/oecc.2015.7340166

2015-01-01

Abstract:The bending loss of silicon slot waveguide is experimentally investigated at 1064 nm and the measured value is 4.1 dB/180° with radius of 15 µm. Consequently, tunable micro-rings are demonstrated based on such slot waveguides.

What problem does this paper attempt to address?

Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Xiangdong Li,Xue Feng,Yidong Huang

DOI: https://doi.org/10.1364/acpc.2015.asu1b.5

2015-01-01

Abstract:Silicon slot waveguide operating at 1064 nm is experimentally demonstrated. The transmission loss and bending loss are measured as 6.0 dB/cm and 4.1 dB/180°. Tunable slot micro-ring with Q factor of 3400 is fabricated.
Tunable Silicon Reflection Cavity Mirror Based on Microring Resonator

Li Xia,Wang Chao,Yu Hui,Jiang Xiaoqing

DOI: https://doi.org/10.3788/aos201636.1223002

2016-01-01

Acta Optica Sinica

Abstract:Considering the requirement of monochromaticity and tunability for resonator used in on-chip optical interconnect source,we design and make a tunable silicon reflection cavity mirror based on microring resonator,using complementary metal-oxide-semiconductor technology and silicon material on insulating substrate.The performance of the reflection cavity is analyzed by the transfer-matrix method,and we find that the reflection cavity shows good properties in sharpness and extinction ratio.The experimental results show that the reflectivity of the reflection cavity can reach 90％ at the wavelength of 1549 nm,the quality factor is 3 × 104,and the free spectral range (FSR) is 9.6 nm.By applying the thermo-optic modulation to the microring resonator,the wavelength tunability in FSR can be realized within the power range of 0-40.5 mW.
Waveguide Bends from Nanometric Silica Wires

LM Tong,IY Lou,E Mazur

DOI: https://doi.org/10.1117/12.575598

2005-01-01

Abstract:We propose to use bent silica wires with nanometric diameters to guide light as optical waveguide bend. We bend silica wires with scanning tunneling microscope probes under an optical microscope, and wire bends with bending radius smaller than 5 mu m are obtained. Light from a He-Ne laser is launched into and guided through the wire bends, measured bending loss of a single bend is on the order of 1 dB. Brief introductions to the optical wave guiding and elastic bending properties of silica wires are also provided. Comparing with waveguide bends based on photonic bandgap structures, the waveguide bends from silica nanometric wires show advantages of simple structure, small overall size, easy fabrication and wide useful spectral range, which make them potentially useful in the miniaturization of photonic devices.
Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

xiangdong li,xue feng,xian xiao,yihang li,kaiyu cui,fang liu,yidong huang

DOI: https://doi.org/10.1109/LPT.2015.2478900

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:Silicon slot waveguides operating at a wavelength of high silicon absorption are fabricated on silicon-on-insulator wafers. The measured transmission loss coefficient is as low as 6 similar to 8 dB/cm at 1064 nm, which is much lower than the material absorption. In addition, the bending loss of the slot waveguides is measured as 4.1 similar to 4.6 dB/180 degrees with a bending radius of 15 mu m. Both the transmission and bending losses are analyzed and discussed. We believe that this work could pave the way to achieve all-silicon photonic integrated circuits, which are very promising for a future on-chip chemical/biological analysis.
Low Transmission Loss Silicon Slot Waveguide Operating at 1064Nm

X. Li,X. Feng,K. Cui,Y. Huang

2014-01-01

Abstract:Silicon slot waveguides that can operate at the wavelength of high material absorption are prepared on SOI wafer. The measured transmission loss coefficient could be as low as 1.07-2.62dB/mm at the wavelength of 1064nm.
Experimental Demonstration of Silicon Slot Waveguide with Low Transmission Loss at 1064Nm

Xiangdong Li,Xue Feng,Xian Xiao,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2014.04.085

IF: 2.4

2014-01-01

Optics Communications

Abstract:Silicon slot waveguides that can operate at the wavelength of high silicon absorption are experimentally demonstrated on SOI wafer. The measured transmission loss coefficient could be as low as 2.28±0.03dB/mm at the wavelength of 1064nm (the slot width of 100nm), which is much lower than the absorption loss of silicon (5dB/mm at 1064nm). According to the simulation, such value is dominated by the surface roughness of sidewalls. The transmission loss is potentially to be reduced to <1dB/mm if the sidewall roughness could be reduced to ~5nm. We believe that this work could pave the way to achieving all silicon photonic integrated circuits, which are attractive for future optical interconnect and chemical/biological analysis.
Coupling structure for silicon slot waveguide operating at 1064 nm

Xiangdong Li,Xue Feng,Xian Xiao,Yihang Li,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2015.09.048

IF: 2.4

2016-01-01

Optics Communications

Abstract:A coupling structure with a shape of isosceles trapezoid is experimentally demonstrated for injecting lightwave into silicon slot waveguide operating at 1064nm. A transfer waveguide is adopted to mimic a silicon emitter and the coupling losses of varied mode sizes of incident lightwave are measured. According to experimental results, the low coupling loss region of “<1dB” is obtained with varied structural parameters. Furthermore, the loss mechanism of our proposed coupling structure is also analyzed.
Designing Low Transmission Loss Silicon Slot Waveguide at Wavelength Band of High Material Absorption

Xiangdong Li,Xue Feng,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2013.05.042

IF: 2.4

2013-01-01

Optics Communications

Abstract:The transmission loss of silicon slot waveguide is investigated by numerical simulation. With the proper designing, the silicon slot waveguide could operate within the wavelength band of high material absorption, i.e., 800–1100nm. The minimum propagation loss can be as low as 0.05dB/mm with optimized structural parameters. Furthermore, a linear relation between the slot width and the operating wavelength is found after optimization, which provides a convenient method to design low-loss slot waveguide.
Concentric Silicon Micro-Ring Resonators with Enhanced Transmission Notch Depth

Xiaohui Li,Ziyang Zhang,Qiang Li,Min Qiu,Yikai Su

DOI: https://doi.org/10.1117/12.804230

2008-01-01

Abstract:In this work, we have analyzed, fabricated and demonstrated concentric micro-ring resonators in silicon-on-insulator (SOI) structure for enhanced transmission notches. The operation principles of the concentric ring resonators are studied by time-domain coupled-mode theory. Directional coupling between concentric rings offers another freedom in designing deep notch optical filters and ultra-sensitive biosensors. The finite-difference-time-domain (FDTD) simulations have shown the improvement of the notch depth, evenly distributed mode field and the effect of the resonance shift. The device is demonstrated in silicon-on-insulator structure. Transmission notch depth improvement of ~ 15dB is demonstrated for the 21-20.02-μm-radius double-ring structure comparing with the single 21-μm-radius ring.
Optical Signal Processing In Silicon Nano-Waveguides

Yikai Su,Qiang Li,Fangfei Liu,Ziyang Zhang,Min Qiu

DOI: https://doi.org/10.1109/OECCACOFT.2008.4610555

2008-01-01

Abstract:All-optical tunable delay, dense wavelength conversion, and non return-to-zero (NRZ) to alternate-mark-inversion (AMI) format conversion are experimentally demonstrated using silicon microrings with a 450 x 250 nm cross-section size.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
A Tunable Silicon Ring Reflector

Xia Li,Yujuan Wan,Ting Hu,Ping Yu,Hui Yu,Jianyi Yang,Xiaoqing Jiang

DOI: https://doi.org/10.1007/s12596-014-0225-6

IF: 2.1

2015-01-01

Journal of Optics

Abstract:We propose and experimentally demonstrated a thermally tunable ring reflector, which is made up of a Y-branch splitter and ring resonator on SOI platform using a CMOS-photonics technology. The results show good reflectivity which can up to be 90 % near the 1550 nm. The reflective response is successfully tuned by one free spectral range through thermo-optic effect with a tuning efficiency of 5.3 mW/nm. We also discuss its applications in silicon hybrid lasers.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Bent silicon slot waveguides with both low loss and low nonlinearity

Yameng Xu,Jiaxuan Li,Mei Kong,Chen Chen

DOI: https://doi.org/10.1007/s11082-020-02569-1

IF: 3

2020-09-29

Optical and Quantum Electronics

Abstract:With the development of highly integrated linear optical systems, both low loss and low nonlinearity are demanded for silicon slot waveguides with a small bending radius. In this paper, we calculate the variations of loss and nonlinearity with the bending radius of air-cladding and silica-cladding slot waveguides, and the mechanisms underlying the variations are revealed. We show that slot waveguides with symmetric silicon arms cannot possess low nonlinearity and low loss simultaneously due to the serious optical power leakage to the substrate. To solve this issue, asymmetric silicon arms are employed. By increasing the width of the inner arm, the high power confinement in the slot can be ensured, and this also makes the simultaneous low loss and low nonlinearity possible. We show that the silica-cladding slot waveguide under a 5 μm radius can obtain power confinement, loss and nonlinearity as respectively 40%, 1.17 × 10<sup>−4</sup> dB/μm and 16.41/W/m, which are all comparable with those in the straight slot waveguide.

engineering, electrical & electronic,optics,quantum science & technology
$2-\Mu$ M Wavelength Grating Coupler, Bent Waveguide, and Tunable Microring on Silicon Photonic MPW

Jiayuan Li,Yingjie Liu,Yafei Meng,Ke Xu,Jiangbing Du,Fengqiu Wang,Zuyuan He,Qinghai Song

DOI: https://doi.org/10.1109/lpt.2018.2799194

IF: 2.6

2018-01-01

IEEE Photonics Technology Letters

Abstract:The 2-mu m wave band is emerging as a promising spectral window for optical communications and gas sensing. With the increasing demand for components at this wavelength range, developing 2-mu m devices is thus required. Silicon photonics is an ideal device technology as it offers several unique advantages of potential low cost and large scale integration. Besides, the silicon nanowire waveguide is transparent and suffers from negligible two photon absorption at 2-mu m wavelengths. Here, we report the demonstration of grating coupler, waveguide bend, and thermally tunable microring filter on a multi-project wafer which is fabricated using CMOS compatible process. The peak coupling efficiency of the grating coupler is measured to be -8.4 dB at 1952 nm. The bending losses for the rib waveguide and the strip loaded waveguide are measured with different radii. The ring resonator is fabricated and tested with an underestimated Q factor of 1520 (through port) which is due to the limitation of the laser linewidth and wavelength tuning resolution. The extinction ratio exceeds 20 dB and the ring resonance can be thermally tuned by a Titanium Nitride heater. The tuning efficiency is 0.17 nm/mW.
Single-mode and Wavelength Tunable Lasers Based on Deep-Submicron Slots Fabricated by Standard UV-lithography

Tingting Yu,Li Zou,Lei Wang,Jian-Jun He

DOI: https://doi.org/10.1364/oe.20.016291

IF: 3.8

2012-01-01

Optics Express

Abstract:By reversing the pillars formed on SiO2 mask sidewalls, it is possible to fabricate deep-submicron slots with width down to 240nm by standard UV-lithography. Based on this newly developed process, a single-mode slotted Fabry-Perot laser and a wavelength tunable laser with periodically distributed slots are designed, fabricated and characterized. Numerical analysis shows the low-loss advantage of deep-submicron slots. Experimentally, the slotted Fabry-Perot laser showed a low threshold current of 22mA and the tunable slotted grating laser exhibited a maximum side mode suppression ratio (SMSR) of 43dB and a discretely tuning range of about 38nm. The method has excellent potential for low cost fabrication of photonic devices with deep-submicron features without using expensive tools such as the e-beam lithography.
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
Wavelength conversion in a silicon mode-split micro-ring resonator with 1G data rate

Ziyang Zhang,Qiang Li,Fangfei Liu,Tong Ye,Yikai Su,Min Qiu

DOI: https://doi.org/10.1109/CLEO.2008.4551773

2008-01-01

Abstract:We experimentally demonstrate the wavelength conversion based on free carrier dispersion effect induced by non-linear absorption in a silicon micro-ring resonator. The pump and signal wavelengths are set by the split resonances spaced by 0.4 nm induced by deformation in the coupling region. The results of 500 Mbps and 1Gbps are presented.
Silicon-based Flexible-Grid Mode- and Wavelength-Selective Switch Utilizing Microring Resonators and Y-junctions

Weiwei Chen,Hao Lu,Pengjun Wang,Shixun Dai,Ruolan Yu,Bohao Zhang,Jian Ding,Qiang Fu,Jun Li,Yan Li,Tingge Dai,Hui Yu,Jianyi Yang

DOI: https://doi.org/10.1109/jlt.2020.2984083

IF: 4.7

2020-01-01

Journal of Lightwave Technology

Abstract:In this article, a design of integrated flexible-grid mode- and wavelength-selective switch consisting of silicon-based symmetric Y-junctions and double-series coupled microring resonators with interferometric couplers is introduced in detail. Using thermal tuning, the described device is capable of routing each mode and wavelength signal from the input port to any output port flexibly and independently, forming different bandwidths as needed. For fixed field coupling coefficients, the device can support multiple different wavelength-channel spacings. A silicon-based flexible-grid 1 x 6 mode- and wavelength-selective switch is carefully designed and analyzed as an example. The designed device works for two mode channels and three wavelength channels. The wavelength-channel spacing can vary from 0.10 to 0.80 nm and the 3-dB bandwidth changes from 0.08 to 2.00 nm. When the wavelength-channel spacing is set to be 0.80 nm, the extinction ratio is greater than 50.90 dB and the crosstalk is less than -15.36 dB.
Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

Jia Xu Brian Sia,Wanjun Wang,Zhongliang Qiao,Xiang Li,Xin Guo,Jin Zhou,Callum G. Littlejohns,Zecen Zhang,Chongyang Liu,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1364/oe.383524

IF: 3.8

2020-01-01

Optics Express

Abstract:In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H2O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.

Tunable Silicon Slot Micro-Ring Operating at 1000Nm

Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Tunable Silicon Reflection Cavity Mirror Based on Microring Resonator

Waveguide Bends from Nanometric Silica Wires

Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

Low Transmission Loss Silicon Slot Waveguide Operating at 1064Nm

Experimental Demonstration of Silicon Slot Waveguide with Low Transmission Loss at 1064Nm

Coupling structure for silicon slot waveguide operating at 1064 nm

Designing Low Transmission Loss Silicon Slot Waveguide at Wavelength Band of High Material Absorption

Concentric Silicon Micro-Ring Resonators with Enhanced Transmission Notch Depth

Optical Signal Processing In Silicon Nano-Waveguides

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

A Tunable Silicon Ring Reflector

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Bent silicon slot waveguides with both low loss and low nonlinearity

$2-\Mu$ M Wavelength Grating Coupler, Bent Waveguide, and Tunable Microring on Silicon Photonic MPW

Single-mode and Wavelength Tunable Lasers Based on Deep-Submicron Slots Fabricated by Standard UV-lithography

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Wavelength conversion in a silicon mode-split micro-ring resonator with 1G data rate

Silicon-based Flexible-Grid Mode- and Wavelength-Selective Switch Utilizing Microring Resonators and Y-junctions

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm