Low Transmission Loss Silicon Slot Waveguide Operating at 1064Nm

X. Li,X. Feng,K. Cui,Y. Huang

2014-01-01

Abstract:Silicon slot waveguides that can operate at the wavelength of high material absorption are prepared on SOI wafer. The measured transmission loss coefficient could be as low as 1.07-2.62dB/mm at the wavelength of 1064nm.

What problem does this paper attempt to address?

Experimental Demonstration of Silicon Slot Waveguide with Low Transmission Loss at 1064Nm

Xiangdong Li,Xue Feng,Xian Xiao,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2014.04.085

IF: 2.4

2014-01-01

Optics Communications

Abstract:Silicon slot waveguides that can operate at the wavelength of high silicon absorption are experimentally demonstrated on SOI wafer. The measured transmission loss coefficient could be as low as 2.28±0.03dB/mm at the wavelength of 1064nm (the slot width of 100nm), which is much lower than the absorption loss of silicon (5dB/mm at 1064nm). According to the simulation, such value is dominated by the surface roughness of sidewalls. The transmission loss is potentially to be reduced to <1dB/mm if the sidewall roughness could be reduced to ~5nm. We believe that this work could pave the way to achieving all silicon photonic integrated circuits, which are attractive for future optical interconnect and chemical/biological analysis.
Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

xiangdong li,xue feng,xian xiao,yihang li,kaiyu cui,fang liu,yidong huang

DOI: https://doi.org/10.1109/LPT.2015.2478900

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:Silicon slot waveguides operating at a wavelength of high silicon absorption are fabricated on silicon-on-insulator wafers. The measured transmission loss coefficient is as low as 6 similar to 8 dB/cm at 1064 nm, which is much lower than the material absorption. In addition, the bending loss of the slot waveguides is measured as 4.1 similar to 4.6 dB/180 degrees with a bending radius of 15 mu m. Both the transmission and bending losses are analyzed and discussed. We believe that this work could pave the way to achieve all-silicon photonic integrated circuits, which are very promising for a future on-chip chemical/biological analysis.
Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Xiangdong Li,Xue Feng,Yidong Huang

DOI: https://doi.org/10.1364/acpc.2015.asu1b.5

2015-01-01

Abstract:Silicon slot waveguide operating at 1064 nm is experimentally demonstrated. The transmission loss and bending loss are measured as 6.0 dB/cm and 4.1 dB/180°. Tunable slot micro-ring with Q factor of 3400 is fabricated.
Designing Low Transmission Loss Silicon Slot Waveguide at Wavelength Band of High Material Absorption

Xiangdong Li,Xue Feng,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2013.05.042

IF: 2.4

2013-01-01

Optics Communications

Abstract:The transmission loss of silicon slot waveguide is investigated by numerical simulation. With the proper designing, the silicon slot waveguide could operate within the wavelength band of high material absorption, i.e., 800–1100nm. The minimum propagation loss can be as low as 0.05dB/mm with optimized structural parameters. Furthermore, a linear relation between the slot width and the operating wavelength is found after optimization, which provides a convenient method to design low-loss slot waveguide.
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
Coupling structure for silicon slot waveguide operating at 1064 nm

Xiangdong Li,Xue Feng,Xian Xiao,Yihang Li,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2015.09.048

IF: 2.4

2016-01-01

Optics Communications

Abstract:A coupling structure with a shape of isosceles trapezoid is experimentally demonstrated for injecting lightwave into silicon slot waveguide operating at 1064nm. A transfer waveguide is adopted to mimic a silicon emitter and the coupling losses of varied mode sizes of incident lightwave are measured. According to experimental results, the low coupling loss region of “<1dB” is obtained with varied structural parameters. Furthermore, the loss mechanism of our proposed coupling structure is also analyzed.
Tunable Silicon Slot Micro-Ring Operating at 1000Nm

XiangdongLi,Xue Feng,Xian Xiao,YihangLi,Kaiyu Cui,Yidong Huang

DOI: https://doi.org/10.1109/oecc.2015.7340166

2015-01-01

Abstract:The bending loss of silicon slot waveguide is experimentally investigated at 1064 nm and the measured value is 4.1 dB/180° with radius of 15 µm. Consequently, tunable micro-rings are demonstrated based on such slot waveguides.
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Ultralow Propagation Loss Slot-Waveguide in High Absorption Active Material

Yongzhuo Li,Kaiyu Cui,Xue Feng,Yidong Huang,Fang Liu,Wei Zhang

DOI: https://doi.org/10.1109/jphot.2014.2320746

IF: 2.4

2014-01-01

IEEE Photonics Journal

Abstract:A slot waveguide formed by high absorption active material is proposed to reduce the propagation loss for monolithic integration. The low propagation loss is attained by concentrating the optical field inside the low-index slot region without absorption. The simulation results show that the propagation loss at 1.55 μm for the slot waveguide can be as low as 1.5 dB/cm in active material with an absorption coefficient of 3000 cm-1, whereas the optical profile is set to be confined within 650 nm.
Suspended silicon waveguides for long-wave infrared wavelengths

J. Soler Penadés,A. Sánchez-Postigo,M. Nedeljkovic,A. Ortega-Moñux,J. G. Wangüemert-Pérez,Y. Xu,R. Halir,Z. Qu,A. Z. Khokhar,A. Osman,W. Cao,C.G. Littlejohns,P. Cheben,I. Molina-Fernández,G. Z. Mashanovich

DOI: https://doi.org/10.48550/arXiv.1711.03468

2017-12-19

Abstract:In this paper we report suspended silicon waveguides operating at a wavelength of 7.67 mm with a propagation loss of 3.1 ? 0.3 dB/cm. To our knowledge this is the first demonstration of low loss silicon waveguides at such a long wavelength, with loss comparable to other platforms that use more exotic materials. The suspended Si waveguide core is supported by a subwavelength grating that provides lateral optical confinement, while also allowing access to the buried oxide layer so that it can be wet etched using hydrofluoric acid. We also demonstrate low loss waveguide bends and s-bends.

Optics
Designing Gallium Nitride Slot Waveguide Operating Within Visible Band

Xian Xiao,Xiangdong Li,Xue Feng,Kaiyu Cui,Fang Liu,Yidong Huang

DOI: https://doi.org/10.1007/s11082-015-0239-6

IF: 3

2015-01-01

Optical and Quantum Electronics

Abstract:The transmission loss of gallium nitride slot waveguide is investigated by numerical simulation. After properly optimizing the structural parameters, the gallium nitride slot waveguide could operate within visible band (400–800 nm) with loss coefficient of 0.4–1.0 dB/cm due to material absorption. Moreover, after considering sidewall roughness and taking the scattering loss into account, the total transmission loss is also calculated and discussed.
Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

X. Zhang,S. Gao,S. He

DOI: https://doi.org/10.2528/pier08120601

2009-01-01

Abstract:The broadband wavelength conversion based on four-wave mixing in a silicon nanowire waveguide is theoretically investigated by taking into account the influence of the waveguide loss and free-carrier absorption on the phase-matched condition. The lossy wavelength conversion is compared with the lossless one in terms of conversion efficiency and bandwidth. The size of the silicon-on- insulator nanowire waveguide is optimized to be 400 nm × 269 nm for broadband wavelength conversion by realizing a flattened dispersion. The pump wavelength is also optimized to 1538.7 nm in order to further enhance the conversion bandwidth. A 3-dB conversion bandwidth of over 280 nm is achieved in the optimized waveguide with the optimized pump wavelength.
Ultra-Low-Loss Silicon Waveguides Covering a Very Large Band

Gangmin Li,Shihan Hong,Long Zhang,Zixu Xu,Daoxin Dai

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10368676

2023-01-01

Abstract:We present an ultra-low-loss silicon waveguide covering a very large band. Additionally, we investigate the waveguide wavelength-dependent scattering losses. Remarkably, we achieve loss reductions of (0.1663, 0.1226, 0.0742) dB/cm around (1310, 1550, 1910) nm, respectively.
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Low propagation loss silicon-on-sapphire waveguides for the mid-infrared

Fangxin Li,Stuart D Jackson,Christian Grillet,Eric Magi,Darren Hudson,Steven J Madden,Yashodhan Moghe,Christopher O'Brien,Andrew Read,Steven G Duvall,Peter Atanackovic,Benjamin J Eggleton,David J Moss

DOI: https://doi.org/10.1364/OE.19.015212

2011-08-01

Abstract:We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8 dB/cm at λ = 1550 nm, ~1.1 to 1.4 dB/cm at λ = 2080 nm and < 2dB/cm at λ = 5.18 μm.
New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Long Zhang,Shihan Hong,Yiwei Xie,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t1i.6

2021-01-01

Abstract:We propose the concept of silicon photonics beyond the singlemode regime with ultra-low-loss propagation of 0.065 dB/cm. The state-of-art micro-racetrack resonator, high-resolution microwave filter and 100-cm-long delayline are demonstrated with standard 220-nm-SOI (silicon-on-insulator) MPW-foundry processes.
Bent silicon slot waveguides with both low loss and low nonlinearity

Yameng Xu,Jiaxuan Li,Mei Kong,Chen Chen

DOI: https://doi.org/10.1007/s11082-020-02569-1

IF: 3

2020-09-29

Optical and Quantum Electronics

Abstract:With the development of highly integrated linear optical systems, both low loss and low nonlinearity are demanded for silicon slot waveguides with a small bending radius. In this paper, we calculate the variations of loss and nonlinearity with the bending radius of air-cladding and silica-cladding slot waveguides, and the mechanisms underlying the variations are revealed. We show that slot waveguides with symmetric silicon arms cannot possess low nonlinearity and low loss simultaneously due to the serious optical power leakage to the substrate. To solve this issue, asymmetric silicon arms are employed. By increasing the width of the inner arm, the high power confinement in the slot can be ensured, and this also makes the simultaneous low loss and low nonlinearity possible. We show that the silica-cladding slot waveguide under a 5 μm radius can obtain power confinement, loss and nonlinearity as respectively 40%, 1.17 × 10<sup>−4</sup> dB/μm and 16.41/W/m, which are all comparable with those in the straight slot waveguide.

engineering, electrical & electronic,optics,quantum science & technology
High quality waveguides for the mid-infrared wavelength range in a silicon-on-sapphire platform

Fangxin Li,Stuart D. Jackson,Christian Grillet,Eric Magi,Darren Hudson,Steven J. Madden,Yashodhan Moghe,Christopher OBrien,Andrew Read,Steven G. Duvall,Peter Atanackovic,Benjamin J. Eggleton,David J. Moss

DOI: https://doi.org/10.1364/OE.19.015212

2017-05-29

Abstract:We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at 1550nm, 1.1 to 1.4dB/cm at 2080nm and < 2dB/cm at = 5.18 microns.

Applied Physics,Optics
Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Zhihua Tu,Taoce Yin,Lars H. Frandsen,Daru Chen,Shiming Gao,Xiaowei Guan

DOI: https://doi.org/10.23919/ps.2019.8818068

2019-01-01

Abstract:A silicon-rich nitride (SRN) ridge waveguide is fabricated and measured to exhibit a low loss of ~2 dB/cm and a nonlinear parameter γ of 1.47 W -1 m -1 at a wavelength of 2 μm.
Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Lin Han,Xiaoke Ruan,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1364/oe.451104

IF: 3.8

2022-01-01

Optics Express

Abstract:An ultralow-loss silicon planar waveguide crossing operating in the O-band was experimentally demonstrated based on the Gaussian beam synthesis method. Elliptical parabolic inverted tapers were introduced in our design to reduce the crossing loss. According to the measurement results, the proposed device exhibits an insertion loss of 0.008 dB, which is the lowest reported loss for planar silicon waveguide crossings operating in the O-band. The device exhibits a low crosstalk below -40 dB over a 40 nm wavelength range with a compact footprint of 18 × 18 µm2 and can be fabricated in a complementary metal-oxide-semiconductor-compatible process.

Low Transmission Loss Silicon Slot Waveguide Operating at 1064Nm

Experimental Demonstration of Silicon Slot Waveguide with Low Transmission Loss at 1064Nm

Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Designing Low Transmission Loss Silicon Slot Waveguide at Wavelength Band of High Material Absorption

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Coupling structure for silicon slot waveguide operating at 1064 nm

Tunable Silicon Slot Micro-Ring Operating at 1000Nm

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Ultralow Propagation Loss Slot-Waveguide in High Absorption Active Material

Suspended silicon waveguides for long-wave infrared wavelengths

Designing Gallium Nitride Slot Waveguide Operating Within Visible Band

Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

Ultra-Low-Loss Silicon Waveguides Covering a Very Large Band

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Low propagation loss silicon-on-sapphire waveguides for the mid-infrared

New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Bent silicon slot waveguides with both low loss and low nonlinearity

High quality waveguides for the mid-infrared wavelength range in a silicon-on-sapphire platform

Optical Properties of A Silicon-Rich Nitride Ridge Waveguide at $2\ \boldsymbol{\mu}\mathbf{m}$ Wavelengths

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers