Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

Experimental Demonstration of Silicon Slot Waveguide with Low Transmission Loss at 1064Nm

Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Low Transmission Loss Silicon Slot Waveguide Operating at 1064Nm

Designing Low Transmission Loss Silicon Slot Waveguide at Wavelength Band of High Material Absorption

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Bent silicon slot waveguides with both low loss and low nonlinearity

Coupling structure for silicon slot waveguide operating at 1064 nm

Tunable Silicon Slot Micro-Ring Operating at 1000Nm

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

Ultralow-Loss Silicon Photonics beyond the Singlemode Regime

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

New-generation Ultra-Low Loss Silicon Photonic Waveguide and Devices

Suspended silicon waveguides for long-wave infrared wavelengths

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Dual-layer thick LPCVD SiN waveguides for low-loss photonics on 200 mm wafers

Low-loss 3-dimensional waveguide crossing with a parabolic taper interlayer coupler based on a SiN-SiN-Si three-layer platform

Power-Attenuated Optimization for Four-Wave Mixing-Based Wavelength Conversion in Silicon Nanowire Waveguides