Abstract:Visualization of material composition across numerous grains and complicated networks of grain boundaries using image processing techniques can reveal fresh insights into the material’s structural evolution and upcoming functional capabilities for a variety of applications. Three-dimensional integrated circuits (3D IC) are the most practical technology for increasing transistor density in future semiconductor applications. One of the key benefits of 3D IC is heterogeneous integration, which results in shorter interconnections due to vertical stacking. However, one of the most significant challenges in building higher-density microelectronics devices is the stress generated by material mismatches in the coefficient of thermal expansion (CTE). The purpose of this study is to analyze grain boundary migration caused by variations in strain energy density using image processing methods for 3D grain continuum modeling. Temperature changes in polycrystalline structures generate stresses and strain energy densities, which may be calculated using FEM software. Single crystal Cu’s anisotropic elastic properties are twisted to suit grain orientation in space and each grain is treated as a single crystal. Grain boundary speeds are calculated using a simple model that relates grain boundary mobility to variations in strain energy density on both sides of grain boundaries. Using the grain continuum model, researchers will be able to investigate the effect of thermally generated stresses on grain boundary motion caused by atomic flux driven by strain energy. Using finite-element modeling of the grain structure in a Through Silicon Via, the stress effect on grain boundaries caused by grain rotation due to CTE mismatch was investigated (TSV). The structure must be modeled using a scanning electron microscopes Electron Backscatter Diffraction (EBSD) image (SEM). Grain growth and subsequent grain boundary rotation can be performed using the appropriate extrapolation method to measure their influence on stress and, as a result, the TSV’s overall reliability.

Monitoring The Stress Evolution Of Through Silicon Vias During Thermal Cycling With Infrared Photoelasticity

Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias

Multiphysics Characterization of Polymer‐filled Through‐silicon Vias (pf‐tsvs) for Three‐dimensional Integration

On the origins of near-surface stresses in silicon around Cu-filled and CNT-filled through silicon vias

Interfacial Stress in Through Silicon Vias

Experimental and Finite Elemental Investigations on Residual Stress of TSV

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Initial Thermal Stress and Strain Effects on Thermal Mechanical Stability of Through Silicon Via

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Finite Element Analysis of the Thermal-Hygroscopic Stress of the Through Silicon Vias(TSV) Interconnect Structure

Influence of Temperature on Pumping Rate and Crystalline Grain of Copper Filler in Through-Silicon Vias

Thermal Stresses of Tsvs with Silicon Post Conductors and Polymer Insulators

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Multiphysics Characterization of Transient Electrothermomechanical Responses of Through-Silicon Vias Applied With a Periodic Voltage Pulse

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

A Stress Evaluation Approach for the Silicon with Nano-Tsvs by Raman Spectroscopy

Study of internal stress on electroplating copper used in through silicon via filling

Strain Gradient Finite Element Analysis of Size Dependence of Thermal Stresses in Through-Silicon Vias (Tsvs)

Image Processing-Based Method of Evaluation of Stress from Grain Structures of Through Silicon Via (TSV)