Abstract:Thermo-mechanical reliability problem of Cu-filled through silicon via (TSVs) has been considered as one of the crucial issues for TSV application. Due to the coefficient of thermal expansion (CTE) mismatch is large between Cu and the consistent materials, thus free expansion and shrinkage of Cu will be restrained when working temperature changes. The induced thermal stresses, including axial stresses and interfacial shear stresses, will lead to TSV-Cu protrusion. However, lots of problems are still unsettled about Cu protrusion, the observation and analysis of local Cu protrusion phenomenon is an outstanding problem that needs urgent attention. In order to comprehensively investigate the Cu protrusion phenomenon in Cu-filled TSVs, the mechanism of local Cu protrusion needs to be further studied. In this paper, the Cu-filled TSV interposer samples with blind TSV were utilized in heat treatment experiments to analyze Cu protrusion. According to the different heat treatment parameters, seven samples of TSV interposer were selected, one of which was used as the control sample. Using a tube furnace, six TSV interposer samples were heated to different peak temperatures (250 °C, 350 °C and 450 °C) by two heating modes (samples were heated to peak temperatures in furnace with the heating rate of 10°C /min, samples were placed in the furnace after furnace temperature had risen to peak temperatures). The occurrence of global Cu protrusion and local Cu protrusion was related to possible influence factors including thermal stress, grain growth and void formation. This research was expected to help optimizing the structure and technology design of TSVs and further improve thermo-mechanical properties of TSVs.

Influence of Temperature on Pumping Rate and Crystalline Grain of Copper Filler in Through-Silicon Vias

Influence of Copper Pumping on Integrity and Stress of Through-Silicon Vias

Wetting Process of Copper Filling in Through Silicon Vias

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Effect of leveler on microstructure and stress of electroplated copper for TSV application

Influence of Electroplating Current Density on Through Silicon Via Filling

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

Effect of External Factors on Copper Filling in 3D Integrated Through-Silicon-Vias (TSVs)

Effect of Heat Treatment Processes on the Cu-electrodeposited Through Glass Vias (TGV) Plate

The Influences of Grain Size Distributions on Thermal-Stresses in Cu-TSV

Optimization of thermal loads in TSV fabrication process based on real-time micro deformation process analysis of copper

Monitoring The Stress Evolution Of Through Silicon Vias During Thermal Cycling With Infrared Photoelasticity

A Study of the Global and Local Cu Protrusion in Cu-Filled Through Silicon Vias Under Heat Treatment

A View on Annealing Behavior of Cu-Filled Through-Silicon Vias (Tsv)

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Microstructure Simulation and Thermo-Mechanical Behavior Analysis of Cu-filled Through Silicon Vias (tsvs) Using Combined Monte Carlo and Finite Element Method

The Influence of Annealing on Characteristics of Copper in Tsv

Research Progress of Copper Electrodeposition Filling Mechanism in Silicon Vias

Influence of inhomogeneous anisotropic Copper grains in TSV on the thermo-mechanical behaviors in the annealing process

Study of internal stress on electroplating copper used in through silicon via filling

Investigation of the Interaction Effect Between the Microstructure Evolution and the Thermo-Mechanical Behavior of Cu-Filled Through Silicon Via