Abstract:Electroplated copper thin films have started to be applied to not only interconnections in printed wiring boards, but also thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity and high thermal conductivity. Thus, the electrical reliability of the electroplated copper interconnections was investigated experimentally. Self-made electroplated copper thin film interconnections were used for the evaluation. Electroplating conditions are as follows. The thin film interconnections were made by damascene process for electromigration tests. The applied current density during the test was varied from 1 MA/cm2 to 10 MA/cm2. Abrupt fracture caused by the local fusion was often observed in the as-electroplated interconnections within a few hours during the test. Since there were a lot of porous grain boundaries in the as-electroplated thin films, the local high Joule heating should have caused the fusion at one of the porous grain boundaries. Actually, it was confirmed that the failure rate increased linearly with the square of the amplitude of the applied current density. However, the diffusion of copper atoms caused by electromigration was enhanced significantly when the film was annealed at 400°C. Many voids and hillocks were observed on their surfaces. This change of the fracture mode clearly indicates the improvement of the crystallographic quality of the annealed film. It was also observed that the stress-induced migration was activated substantially in the annealed film. Large voids and hillocks grew during the custody of the film even at room temperature without any application of current. This stress-induced migration was caused by the increase of residual tensile stress of about 200 MPa in the annealed film. It was also found that sulfur atoms segregated in the grown hillocks, though no sulfur atoms were found by EDX in the initial as-electroplated interconnections or other area in the annealed thin film interconnections. Thus, the hillock formation in the annealed interconnections was enhanced by the segregation of sulfur atoms. These sulfur atoms should have been introduced into the electroplated films during electroplating. Therefore, it is very important to control the micro texture, the residual stress and the concentration of sulfur in the electroplated copper thin film interconnections to assure the stable life, in other words, to eliminate their sudden brittle fracture and time-dependent degradation caused by the residual stress in the thin film interconnections.

Improvement of Thermal Conductivity of Electroplated Copper Interconnections by Controlling Their Crystallinity

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

Improvement of the reliability of TSV interconnections by controlling the crystallinity of electroplated copper thin films

Evaluation of the Crystallographic Quality of Electroplated Copper Thin-Film Interconnection Embedded in a Si Substrate

Stress-Induced and Electro-Migration of Electroplated Copper Thin Film Interconnections Used for 3D Integration

Effect of High-Frequency and High-Density Current on Adhesive Strength of Copper Thin Film

The W alloying effect on thermal stability and hardening of nanostructured Cu-W alloyed thin films

Effect of impurities on anisotropic grain growth in (111)-oriented nanotwinned copper

Eliminating Cu–Cu Bonding Interfaces Using Electroplated Copper and (111)-Oriented Nanotwinned Copper

Research on Effect of Annealing on Copper Deposited by Electroplating in High Density TSV

Enhanced electromigration resistance through grain size modulation in copper interconnects

Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers

Investigation of the Dendritic Structure Influence on the Electrical and Mechanical Properties Diversification of the Continuously Casted Copper Strand

Influence of Temperature on Pumping Rate and Crystalline Grain of Copper Filler in Through-Silicon Vias

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Effect of chromium interlayer thickness on interfacial thermal conductance across copper/diamond interface

Improvement of Interface and Electrical Properties in Carbon Nanotube/nanocrystalline Copper Composite Films

Constrained Grain Boundary Diffusion in Thin Copper Films

Investigate the Microstructure Changes in Cu Through-Silicon Vias (tsvs) under Thermal Process

The Effect of Sputtered W-based Carbide Diffusion Barriers on the Thermal Stability and Void Formation in Copper Thin Films