Abstract:Electroplated copper thin films have started to be applied to not only interconnections in printed wiring boards, but also thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity and high thermal conductivity. Thus, the electrical reliability of the electroplated copper interconnections was investigated experimentally. Self-made electroplated copper thin film interconnections were used for the evaluation. Electroplating conditions are as follows. The thin film interconnections were made by damascene process for electromigration tests. The applied current density during the test was varied from 1 MA/cm2 to 10 MA/cm2. Abrupt fracture caused by the local fusion was often observed in the as-electroplated interconnections within a few hours during the test. Since there were a lot of porous grain boundaries in the as-electroplated thin films, the local high Joule heating should have caused the fusion at one of the porous grain boundaries. Actually, it was confirmed that the failure rate increased linearly with the square of the amplitude of the applied current density. However, the diffusion of copper atoms caused by electromigration was enhanced significantly when the film was annealed at 400°C. Many voids and hillocks were observed on their surfaces. This change of the fracture mode clearly indicates the improvement of the crystallographic quality of the annealed film. It was also observed that the stress-induced migration was activated substantially in the annealed film. Large voids and hillocks grew during the custody of the film even at room temperature without any application of current. This stress-induced migration was caused by the increase of residual tensile stress of about 200 MPa in the annealed film. It was also found that sulfur atoms segregated in the grown hillocks, though no sulfur atoms were found by EDX in the initial as-electroplated interconnections or other area in the annealed thin film interconnections. Thus, the hillock formation in the annealed interconnections was enhanced by the segregation of sulfur atoms. These sulfur atoms should have been introduced into the electroplated films during electroplating. Therefore, it is very important to control the micro texture, the residual stress and the concentration of sulfur in the electroplated copper thin film interconnections to assure the stable life, in other words, to eliminate their sudden brittle fracture and time-dependent degradation caused by the residual stress in the thin film interconnections.

Improvement of Thermal Conductivity of Electroplated Copper Thin-Film Interconnections by Controlling Their Micro Texture

Improvement of Thermal Conductivity of Electroplated Copper Interconnections by Controlling Their Crystallinity

Evaluation of the Crystallographic Quality of Electroplated Copper Thin-Film Interconnection Embedded in a Si Substrate

Improvement of the reliability of TSV interconnections by controlling the crystallinity of electroplated copper thin films

Stress-Induced and Electro-Migration of Electroplated Copper Thin Film Interconnections Used for 3D Integration

Effect of High-Frequency and High-Density Current on Adhesive Strength of Copper Thin Film

Effect of mixing glass frits on electrical property and microstructure of sintered Cu conductive thick film

Significantly Enhanced Conformal Contact by the Functional Layers on a Copper Film for Thermal Interface Materials

Fabrication, Mechanical and Thermal Properties of Copper Coated Graphite Films Reinforced Copper Matrix Laminated Composites Via Ultrasonic-Assisted Electroless Plating and Vacuum Hot-Pressing Sintering

Improvement of Interface and Electrical Properties in Carbon Nanotube/nanocrystalline Copper Composite Films

Investigation of the Dendritic Structure Influence on the Electrical and Mechanical Properties Diversification of the Continuously Casted Copper Strand

Eliminating Cu–Cu Bonding Interfaces Using Electroplated Copper and (111)-Oriented Nanotwinned Copper

Effects of 2-Mercaptopyridine and Janus Green B As Levelers on Electrical Resistance of Electrodeposited Copper Thin Film for Interconnects

Effect of impurities on anisotropic grain growth in (111)-oriented nanotwinned copper

Processing and Specimen Thickness to Grain Size (t/d) Ratio Effects on Tensile Behaviour and Microformability of Copper Foils

Thermal Analysis of Cu-Organic Composite Nanoparticles and Fabrication of Highly Conductive Copper Films

Effects of Cr Dopant on the Microstructure and Electromigration Performance of Cu Interconnects

Thermal interfacial coupling between electroplated copper and indium

Investigation of the Behaviors of Various Electroplated Copper Films During CMP

Effect of Heat Treatment Processes on the Cu-electrodeposited Through Glass Vias (TGV) Plate