Abstract:The effects of the p-AlGaN electron blocking layer (EBL) thickness on the performance of InGaN/GaN multiple quantum wells (MQWs) green light emitting diodes (LEDs) was investigated. It was observed that increasing the thickness of the p-AlGaN EBL could reduce the leakage current and improve the efficiency of green LEDs with large V-pits. It is proposed that increasing the EBL thickness leads to a thicker p-AlGaN on the sidewalls of V-pits, which provides a thicker energy barrier and consequently screens dislocations more effectively. The leakage current (at -5 V) of LEDs with a 40 nm EBL is about an order of magnitude lower than that of LEDs with a 20 nm EBL. With the increase in EBL thickness, at low current densities, the external quantum efficiency (EQE) firstly decreases and then increases afterwards, which could be attributed to the competition between the enhancement of the radiative recombination rate and the reduction of the hole injection efficiency. At operating current density, there is a positive correlation between EQE and the thickness of the EBL. This is attributed to the improved electron confinement in the active region by preventing electrons overflowing to the p-type layer. Meanwhile, the efficiency droop is obviously suppressed when the thickness of the EBL increases from 20 nm to 40 nm. However, further increasing the thickness of the EBL may deteriorate the EQE and efficiency droop. Packaged green LED chips with an optimized EBL emit 260 mW (dominant wavelength: 520 nm) at 350 mA (35 A cm(-2)), and the EQE reaches 31.2%.

Influence of AlGaN Electron Blocking Layer on Modulation Bandwidth of GaN-Based Light Emitting Diodes

Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on Al x In y Ga 1– x – y N Electron Blocking Layer

Improvement of Blue Llight-Ight-ight-eeemitting Mitting Ddiodes Iodes with an Undoped Graded Layer As the Electrons Tunneling Barrier Layer

The Effectiveness of Electron Blocking Layer in InGaN‐based Laser Diodes with Different Indium Content

Effects of P-Algan Ebl Thickness on the Performance of Ingan Green Leds with Large V-Pits

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Improvement of Hole Injection and Electron Overflow by a Tapered AlGaN Electron Blocking Layer in InGaN-based Blue Laser Diodes

Performance Enhancement of AlGaN-based Ultraviolet Light-Emitting Diodes by Tailoring Polarization in Electron Blocking Layer

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

Greatly Enhanced Performance of AlGaN-based Deep Ultraviolet Light Emitting Diodes by Introducing a Polarization Modulated Electron Blocking Layer.

Numerical Investigation on the Performance Enhancement of InGaN/GaN Light‐Emitting Diodes with a Novel p‐i‐n Electron‐Blocking Layer

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer

Effects of Electron Blocking Layer Thickness on the Electrical and Optical Properties of AlGaN-Based Deep-Ultraviolet Light-Emitting Diode

Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes

Optimization of the Electron Blocking Layer in GaN Laser Diodes

Enhanced Hole Injection in AlGaN-Based Ga-Polar Ultraviolet Light-Emitting Diodes with Polarized Electric-Field Reservoir Electron Barrier

Optimized Growth of P-Type Algan Electron Blocking Layer in the Gan-Based Led

Utilization of Polarization-Inverted Alingan or Relatively Thinner Algan Electron Blocking Layer in Ingan-Based Blue-Violet Laser Diodes

Advantage Of Tapered And Graded Algan Electron Blocking Layer In Ingan-Based Blue Laser Diodes