Abstract:Non-radiative Auger-Meitner recombination processes in III-nitride based optoelectronic devices operating in the visible spectral range have received significant attention in recent years as they can present a major contribution to the efficiency drop at high temperatures and carrier densities. However, insight into these recombination processes is sparse for III-N devices operating in the ultraviolet wavelength window. In this work we target the temperature dependence of the Auger-Meitner recombination rate in (Al,Ga)N/AlN quantum wells by means of an atomistic electronic structure model that accounts for random alloy fluctuations and connected carrier localisation effects. Our calculations show that in the low temperature regime both the non-radiative Auger-Meitner and radiative recombination rate are strongly impacted by alloy disorder induced carrier localisation effects in these systems. The influence of alloy disorder on the recombination rates is reduced in the high temperature regime, especially for the radiative rate. The Auger-Meitner recombination rate, however, may still be more strongly impacted by alloy disorder when compared to the radiative rate. Our calculations show that while on average radiative recombination slightly increases with increasing temperature, the Auger-Meitner recombination process may, on average, slightly decrease in the temperature range relevant to the thermal efficiency drop (thermal droop). This finding suggests that the considered Auger-Meitner recombination process is unlikely to be directly responsible for the thermal efficiency drop observed experimentally in (Al,Ga)N/AlN quantum well based light emitting devices. Thus, different non-radiative processes, external to the active region, may be the underlying cause of thermal droop in (Al,Ga)N wells.

On the Nature of Radiative Recombination in GaAsN

Properties Of Radiative Recombination In Gaasn Epilayers

Optical Study of Electronic States in Gaasn

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

Optical Study of Localized and Delocalized States in Gaasn/Gaas

Time-resolved photoluminescence spectroscopy of GaN excitonic transitions

Neutral-Donor-Bound Exciton Recombination Dynamics in Gan Grown by Metalorganic Chemical-Vapor-Deposition

Acceptor-Bound Exciton Recombination Dynamics In P-Type Gan

Spontaneous Emission Mechanisms of GaInAsN∕GaAs Quantum Dot Systems

Theoretical study of the temperature dependence of Auger-Meitner recombination in (Al,Ga)N quantum wells

Localized Exciton Dynamics in AlInGaN Alloy

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Thermal Redistribution of Localized Excitons and Its Effect on the Luminescence Band in InGaN Ternary Alloys

Radiative Recombination Characteristics in GaAs Multilayer N+−i Interfaces

Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells

Steady-state recombination lifetimes in polar InGaN/GaN quantum wells by time-resolved photoluminescence

Interband Luminescence and Absorption of GaNAs/GaAs Single-Quantum-well Structures

Exciton localization and dynamics in GaNAsP nanowires

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

Ultrafast Recombination in Si-doped InN

Inhomogeneous spatial distribution of non radiative recombination centers in GaN/InGaN nanowire heterostructures studied by cathodoluminescence