Abstract:Solution-driven metal-oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In2O3 semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In2O3/Al2O3 thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 degrees C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm(2) .V-1 . s(-1), a large ON/OFF current ratio of 10(6), a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of 1.97 x 10(12) cm(-2), respectively. To demonstrate the potential of In2O3/AlOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 5. Importantly, all these device parameters were obtained at an ultralow operating voltage of 2.5 V. As a result, it can be inferred that the water-induced In2O3 TFTs based on ALD-derived Al2O3 dielectrics have a potential application as a promising alternative for lowcost, low-power consumption, and large-area environmentally friendly oxide flexible electronics.

Tungsten Oxide Proton Conducting Films For Low-Voltage Transparent Oxide-Based Thin-Film Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-Based Homojunction Thin-Film Transistors

Proton Conducting Zeolite Films for Low-Voltage Oxide-Based Electric-Double-layer Thin-Film Transistors and Logic Gates

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Highly Transparent and Conductive W-Doped ZnO/Cu/W-Doped ZnO Multilayer Source/Drain Electrodes for Metal-Oxide Thin-Film Transistors

Ion-gated Tungsten Oxide Based Electrochemical Transistors with Subthreshold Slopes Approaching the Thermodynamic Limit

Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Improvement of Electrical Characteristics and Stability in Low-Voltage Indium Oxide Thin-Film Transistors by Using Tungsten Doping

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors.

Hydrogenation Dynamics Of Electrically Controlled Metal-Insulator Transition In Proton-Gated Transparent And Flexible Wo3 Transistors

Design Of Highly Stable Tungsten-Doped Izo Thin-Film Transistors With Enhanced Performance

Solution-Processed Zinc Oxilde Thin Films and Top-Gate Thin Film Transistors

Influence of Tungsten Doping on the Performance of Indium–Zinc–Oxide Thin-Film Transistors

Transparent and Conductive W-Doped Sno2 Thin Films Fabricated by an Aqueous Solution Process

Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors

Transparent conductive oxide thin films of tungsten-doped indium oxide

Enhanced Electrochromic Performance of Macroporous WO3 Films Formed by Anodic Oxidation of DC-sputtered Tungsten Layers

Aqueous Solution Induced High-Dielectric-Constant AlOx :Y Films for Thin-Film Transistor Applications