Abstract:In this study, anodization is introduced to induce dehydroxylation and condensation of solution-processed ZrOx films as well as growth of AlOx films. The anodization-induced ZrOx/AlOx stacked films are systematically studied in structure, surface morphology, density, chemical composition, dielectric and electrical properties. X-ray diffraction and atomic force microscopy reveal that anodization-induced ZrOx/AlOx stacked films exhibit amorphous structure and smooth surface roughness (<1 nm). X-ray reflectivity and x-ray photoelectron spectroscopy reveal that the solution-processed ZrOx films exhibit a higher density and a lower content of hydroxyl groups after anodization, suggesting the anodization can induce dehydroxylation and condensation for the ZrOx films. The synergistic effect of collision inducing dissociation and the self-heating from anodization of Al film is proposed to explain the dehydroxylation of the ZrOx films. Dielectric and electrical measurements illustrate that the anodization-induced ZrOx/AlOx stacked films exhibit a lower leakage current, a higher breakdown voltage and a slighter capacitance dispersion on frequency comparing with that of solution-processed ZrOx films without anodization. To verify the possible applications of anodization-induced ZrOx/AlOx stacked films as the gate dielectric in metal-oxide (MO) thin-film transistors (TFTs), they were integrated in low-temperature, directly photopatternable InOx TFTs. Remarkably, with a low process temperature of 200 degrees C, the InOx TFTs based on the optimized ZrOx/AlOx dielectrics exhibit an average mobility of 8.94 cm(2) V-1 s(-1), an I-on/I-off of large than 10(5) and negligible hysteresis in transfer curves. These results demonstrate the potential application of anodization-induced solution-processed MO dielectric films for low-temperature TFTs.

Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-Based Homojunction Thin-Film Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Tungsten Oxide Proton Conducting Films For Low-Voltage Transparent Oxide-Based Thin-Film Transistors

Vertical Oxide Homojunction TFTs of 0.8 V Gated by $ \hbox{h}_{3}\hbox{po}_{4}$ -Treated $\hbox{sio}_{2}$ Nanogranular Dielectric

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for In2O3 Thin Film Transistors

Facile and Environmentally Friendly Solution-Processed Aluminum Oxide Dielectric for Low-Temperature, High-Performance Oxide Thin-Film Transistors.

Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

Sol-gel Processed High-K Aluminum Oxide Dielectric Films for Fully Solution-Processed Low-Voltage Thin-Film Transistors

Flexible Oxide-Based Thin-Film Transistors on Plastic Substrates for Logic Applications

Aqueous Solution Induced High-Dielectric-Constant AlOx :Y Films for Thin-Film Transistor Applications

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Anodization-Induced ZrOx/AlOx Stacked Films for Low-Temperature, Solution-Processed Indium Oxide Thin-Film Transistors

Proton Conducting Sodium Alginate Electrolyte Laterally Coupled Low-Voltage Oxide-Based Transistors

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

High-performance thin film transistors based on amorphous Al–N co-doped InZnO films prepared by RF magnetron sputtering

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al<sub>x</sub>O<sub>y</sub> dielectrics

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Preparation and Characterization of Solution-Processed Nanocrystalline p -Type CuAlO 2 Thin-Film Transistors