Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Deterministic Plasma-Aided Synthesis of High-Quality Nanoislanded Nc-Sic Films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Sic Nanocrystals: High-Rate Deposition and Nano-Scale Control by Thermal Plasma

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

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Synthesis of Ultrafine Silicon Carbide Nanoparticles Using Nonthermal Arc Plasma at Atmospheric Pressure

Phase-controlled Synthesis of Nickel Silicide Nanostructures

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

A parametric study of non-thermal plasma synthesis of silicon nanoparticles from a chlorinated precursor

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Plasma synthesis of single crystal silicon nanoparticles for novel electronic device applications

Fabrication of ultra-small SiC nanoparticles with adjustable size, stoichiometry and photoluminescence by AC multi-arc plasmas

Manipulation Of Phase And Microstructure At Nanoscale For Sic In Molten Salt Synthesis

Numerical Study of Si Nanoparticle Formation by SiCl4hydrogenation in RF Plasma

Synthesis of Ultra-Thin Carbon Layers on Sic Substrate by Ion Implantation

Simple Synthesis of Ultrafine Amorphous Silicon Carbide Nanoparticles by Atmospheric Plasmas

Formation of Silicon on Plasma Synthesized Aluminum Nitride Structure by Ion Cutting

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Precise morphology control of in-plane silicon nanowires via a simple plasma pre-treatment