Abstract:In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.

Chemical Insight into Origin of Forming-Free Resistive Random-Access Memory Devices

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Forming-Free HfO 2 -Based Resistive Random Access Memory by X-Ray Irradiation

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM

Thermally Stable Transparent Resistive Random Access Memory Based on All‐Oxide Heterostructures

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Ab Initio Modeling of Oxygen-Vacancy Formation in Doped-Hfox Rram: Effects of Oxide Phases, Stoichiometry, and Dopant Concentrations

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability

Physical and Chemical Mechanisms in Oxide-Based Resistance Random Access Memory.

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

ALD HfO2 Based RRAM with Ti Capping