Abstract:The HfOx-based resistive random access memory (RRAM) has been extensively investigated as one of the emerging nonvolatile memory (NVM) candidates due to its excellent memory performance and compatibility with CMOS process. In this study, the influences of deposition ambient, especially the oxygen partial pressure during thin film sputtering, on the resistive switching characteristics are discussed in detail for possible nonvolatile memory applications. The Ni/HfOx/TiN RRAMs are fabricated, and the HfOx films with different oxygen content are deposited by a radio frequency magnetron sputtering at room temperature under different oxygen partial pressures. The oxygen partial pressures in the sputter deposition process are 2%, 4% and 6% relative to engineer oxygen content in the HfOx film. Current-voltage (I-V) measurements, X-ray photoelectron spectroscopy, and atomic force microscopy are performed to explain the possible nature of the stable resistive switching phenomenon. Through the current-voltage measurement, typical resistive switching behavior is observed in Ni/HfOx/TiN device cells. It is found that with the increase of the oxygen partial pressure during the preparation of HfOx films, the stoichiometric ratio of O in the film is improved, the root mean square (RMS) of the surface roughness of the film slightly decreases due to the slower deposition rate under a higher oxygen partial pressure, and the high resistance state (HRS) current decreases. In addition, by controlling the oxygen content of the device, the endurance performance of the device is improved, which reaches up to 10 3 under a 6% oxygen partial pressure. The HfOx films prepared at a higher oxygen partial pressure supply enough oxygen ions to preserve the switching effect. As the oxygen partial pressure increases, the uniformity of the switching voltage is improved, which can be attributed to the fact that better oxidation prevents the point defects (oxygen vacancies) from aggregating into extended defects. Through the linear fitting and temperature test, it is found that the conduction mechanism of Ni/HfOx/TiN RRAM device cells in low resistance state is an ohmic conduction mechanism, while in high resistance state it is a Schottky emission mechanism. The interface between TE and the oxide layer (HfOx) is expected to influence the resistive switching phenomenon. The activation energy of the device is investigated based on the Arrhenius plots in HRS. A switching model is proposed according to the theory of oxygen vacancy conductive filament. Furthermore, the self-compliance behavior is found and explained.

Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Optimization of the Forming Process of HfOx-Based RRAM to Achieve Bidirectional Forming and Enhanced Switching Performance by Inserting an Oxygen-Vacancy-Rich Layer

Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2

Understanding the Switching Oxide Defect Formation and Recovery on HfOx Based RRAM Device

Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study

HfOx Bipolar Resistive Memory with Robust Endurance Using ZrNx As Buttom Electrode

First Principle Simulations on the Effects of Oxygen Vacancy in HfO2-based RRAM

Exploring the Direction-Dependency of Conductive Filament Formation and Oxygen Vacancy Migration Behaviors in HfO2-based RRAM

Influneces of Different Oxygen Partial Pressures on Switching Properties of Ni/HfOx/TiN Resistive Switching Devices

Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies (adv. Mater. 10/2017)

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

A Forming-Free Bipolar Resistive Switching in HfOx-Based Memory with a Thin Ti Cap

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Nitrogen-Oxyanion-Doped HfO2 Resistive Random-Access Memory with Chemically Enhanced Forming

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Investigation of Resistive Switching in Cu-Doped Hfo2 Thin Film for Multilevel Non-Volatile Memory Applications

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by in Situ TEM Studies

Oxygen Vacancy Formation Accompanied by Hf Oligomer in Amorphous-HfOx-Bascd RRAM: A First Principles Study

Uncorrelated Multiple Conductive Filament Nucleation and Rupture in Ultra-Thin High-Κ Dielectric Based Resistive Random Access Memory

Study on Multilevel Resistive Switching Behavior with Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM