Abstract:One-dimensional ferroelectric nanostructures, carbon nanotubes (CNT) and CNT-inorganic oxides have recently been studied due to their potential applications for microelectronics. Here, we report coating of a registered array of aligned multi-wall carbon nanotubes (MWCNT) grown on silicon substrates by functional ferroelectric Pb(Zr,Ti)O3 (PZT) which produces structures suitable for commercial prototype memories. Microstructural analysis reveals the crystalline nature of PZT with small nanocrystals aligned in different directions. First-order Raman modes of MWCNT and PZT/MWCNT/n-Si show the high structural quality of CNT before and after PZT deposition at elevated temperature. PZT exists mostly in the monoclinic Cc/Cm phase, which is the origin of the high piezoelectric response in the system. Low-loss square piezoelectric hysteresis obtained for the 3D bottom-up structure confirms the switchability of the device. Current-voltage mapping of the device by conducting atomic force microscopy (c-AFM) indicates very low transient current. Fabrication and functional properties of these hybrid ferroelectric-carbon nanotubes is the first step towards miniaturization for future nanotechnology sensors, actuators, transducers and memory devices.

Memory Effect of Nonvolatile Bistable Devices Based on CdSe∕ZnS Nanoparticles Sandwiched Between C60 Layers

Nonvolatile Electrical Bistability and Operating Mechanism of Memory Devices Based on CdSe/ZnS Nanoparticle/polymer Hybrid Composites

Multilevel Nonvolatile Memory Effects In Hybrid Devices Containing Cdse/Zns Nanoparticle Double Arrays Embedded In The C-60 Matrices

Memory Effect of CdSe∕ZnS Nanoparticles Embedded in a Conducting Poly[2-Methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] Polymer Layer

Nonvolatile Memory Devices Based on Zno/Polyimide Nanocomposite Sandwiched Between Two C-60 Layers

Nonvolatile Memory Effects of ZnO Nanoparticles Embedded in an Amorphous Carbon Layer

Carrier Transport Mechanisms Of Nonvolatile Memory Devices Based On Nanocomposites Consisting Of Zno Nanoparticles With Polymethylmethacrylate Nanocomposites Sandwiched Between Two C-60 Layers

Organic Bistable Devices Based on Core/shell CdSe∕ZnS Nanoparticles Embedded in a Conducting Poly(n-Vinylcarbazole) Polymer Layer

Electrical Bistabilities and Conduction Mechanisms of Nonvolatile Memories Based on a Polymethylsilsesquioxane Insulating Layer Containing CdSe/ZnS Quantum Dots

Carrier Transport Mechanisms of the Writing and the Erasing Processes for Al/ZnO Nanoparticles Embedded in a Polymethyl Methacrylate Layer/c60/p-Si Diodes.

Formation and Electrical Bistability Properties of Zno Nanoparticles Embedded in Polyimide Nanocomposites Sandwiched Between Two C-60 Layers

Carrier Transport Mechanisms of Bistable Memory Devices Fabricated Utilizing Core–shell CdSe/ZnSe Quantum-Dot/multi-walled Carbon Nanotube Hybrid Nanocomposites

Electrical Bistabilities and Operating Mechanisms of Memory Devices Fabricated Utilizing Zno Quantum Dot-Multi-Walled Carbon Nanotube Nanocomposites

Operating Mechanisms of Organic Bistable Devices Containing ZnO Nanoparticles Embedded in a Poly-4-Vinyl-Phenol Layer

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Nonvolatile flexible organic bistable devices fabricated utilizing CdSe/ZnS nanoparticles embedded in a conducting poly N-vinylcarbazole polymer layer.

Ferroelectric-carbon Nanotube Memory Devices.

Nonvolatile Memory Devices With Cu2s And Cu-Pc Bilayered Films \

Carrier Transport and Memory Mechanisms of Multilevel Resistive Memory Devices with an Intermediate State Based on Double-Stacked Organic/Inorganic Nanocomposites

Effect of the Interfacial Nanoparticles on Organic Cross-Point Memory

Nonvolatile Multilevel Conductance and Memory Effect in Molecule-Based Devices