Abstract:Antimony selenosulfide (Sb 2 (S,Se) 3 ) is a promising photovoltaic material because of its high chemical stability, optimal optoelectronic properties, and low-cost advantages. However, finding suitable material processing approaches to obtain elemental controlled Sb 2 (S,Se) 3 films with suppressed deep-level defects poses fundamental demands and challenges to developing this emerging solar technology. Here, we developed a robust method for tailoring the composition of the film through controlling the anion elements. The films were prepared by evaporating the presintered Sb 2 (S,Se) 3 alloy compound via a single-source thermal evaporation process. A quasi-precise estimate of single-phase Sb 2 (S,Se) 3 films was made by sintering Sb, S, and Se elemental precursors and adjusting the anion molar ratio in the prefabricated Sb 2 (S,Se) 3 alloy compound, and the elemental ratio of the precursor alloy compound was maintained in the as-obtained Sb 2 (S,Se) 3 films. A highly efficient Sb 2 (S,Se) 3 solar cell with a power conversion efficiency of 8.25% was achieved by introducing low-cost CuPc-doped P3HT as a hole-transporting layer. Here, we demonstrate the dependence of deep-level defects and oriented crystal growth on the S/Se atomic ratios and show how tunability can be used to improve carrier transport for photovoltaic energy conversion. Our study presents a novel approach to fabricating metal chalcogenide semiconducting films and improving the performance of Sb 2 (S,Se) 3 solar cells.

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