Abstract:An effective strategy of Al3+ cation doping on CdS buffer layer is introduced in Sb2Se3 solar cells. The optimized band alignment, suppressed interface recombination, and enhanced carrier transport, result in the improvement of device performance. Consequently, the champion Sb2Se3/CdS:Al device delivers interesting power conversion efficiency of 8.41%, accompanied with significant increase of short‐circuit current density to 28.26 mA cm−2 compared with un‐doped counterpart. Exhibiting outstanding optoelectronic properties, antimony selenide (Sb2Se3) has attracted considerable interest and has been developed as a light absorber layer for thin‐film solar cells over the decade. However, current state‐of‐the‐art Sb2Se3 devices suffer from unsatisfactory "cliff‐like" band alignment and severe interface recombination loss, which deteriorates device performance. In this study, the heterojunction interface of an Sb2Se3 solar cell is improved by introducing effective aluminum (Al3+) cation into the CdS buffer layer. Then, the energy band alignment of Sb2Se3/CdS:Al heterojunction is modified from a "cliff‐like" structure to a "spike‐like" structure. Finally, heterojunction interface engineering suppresses recombination losses and strengthens carrier transport, resulting in a high efficiency of 8.41% for the substrate‐structured Sb2Se3 solar cell. This study proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, paving a bright avenue to overcome the efficiency bottleneck of Sb2Se3 thin‐film solar cells.

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