Abstract:Actomic layer deposition processed SnOx is introduced as electron transport layer in Sb2Se3 thin‐film solar cells. An additional post‐annealing can remarkably enhance the photovoltaic performance, thanks to the optimized carrier dynamics under simultaneously improving the properties of SnOx, Sb2Se3/SnOx heterojunction and Sb2Se3 absorber layer. A stimulating efficiency of 7.39% represents the record value for Cd‐free substrate structured Sb2Se3 solar cells. Antimony selenide (Sb2Se3) is a highly promising photovoltaic material thanks to its outstanding optoelectronic properties, as well as its cost‐effective and eco‐friendly merits. However, toxic CdS is widely used as an electron transport layer (ETL) in efficient Sb2Se3 solar cells, which largely limit their development toward market commercialization. Herein, an effective green Cd‐free ETL of SnOx is introduced and deposited by atomic layer deposition method. Additionally, an important post‐annealing treatment is designed to further optimize the functional layers and the heterojunction interface properties. Such engineering strategy can optimize SnOx ETL with higher nano‐crystallinity, higher carrier density, and less defect groups, modify Sb2Se3/SnOx heterojunction with better interface performance and much desirable "spike‐like" band alignment, and also improve the Sb2Se3 light absorber layer quality with passivated bulk defects and prolonged carrier lifetime, and therefore to enhance carrier separation and transport while suppressing non‐radiative recombination. Finally, the as‐fabricated Cd‐free Mo/Sb2Se3/SnOx/ITO/Ag thin‐film solar cell exhibits a stimulating efficiency of 7.39%, contributing a record value for Cd‐free substrate structured Sb2Se3 solar cells reported to date. This work provides a viable strategy for developing and broadening practical applications of environmental‐friendly Sb2Se3 photovoltaic devices.

Improving the Performance of Sb2Se3 Thin Film Solar Cells over 4% by Controlled Addition of Oxygen During Film Deposition

Improving CdTe‐Based Thin‐Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process

The role of O2 in CdSeTe thin film deposition and CdSeTe/CdTe solar cell performance

Oxygen Content Modulation Toward Highly Efficient Sb2Se3 Solar Cells

Performance improvement of Sb2Se3 thin-film solar cells through ultraviolet ozone treatment

Sputtering Al2O3 as an effective interface layer to improve open-circuit voltage and device performance of Sb2Se3 thin-film solar cells

Molecular Beam Epitaxy Deposition of In Situ O‐Doped CdS Films for Highly Efficient Sb2(S,Se)3 Solar Cells

Enhanced Sb2Se3 Solar Cell Performance Through Theory-Guided Defect Control

Improved Open‐Circuit Voltage of Sb 2 Se 3 Thin‐Film Solar Cells Via Interfacial Sulfur Diffusion‐Induced Gradient Bandgap Engineering

Achievable efficiency improvement of Sb2Se3 thin-film solar cells through interface engineering

Thermal diffused post-selenization for enhancing the photovoltaic performance of thermally evaporated Sb 2 Se 3 solar cell

Solution-processed SnO2 interfacial layer for highly efficient Sb2Se3 thin film solar cells

Sputtered and Selenized Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 Mv

Fabricating High‐Efficiency Sb2(S,Se)3 Solar Cells by Novel Additive‐Assisted Longitudinal Component Engineering

Hydrazine Hydrate‐Induced Surface Modification of CdS Electron Transport Layer Enables 10.30%‐efficient Sb2(S,Se)3 Planar Solar Cells

Electron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd‐Free Sb2Se3 Thin‐Film Solar Cells

Solvent‐Assisted Hydrothermal Deposition Approach for Highly‐Efficient Sb2(S,Se)3 Thin‐Film Solar Cells

Optimisation of Sb2S3 thin-film solar cells via Sb2Se3 post-treatment

High-efficiency Sb2Se3 thin-film solar cells based on Cd(S,O) buffer layers prepared via spin-coating

Improved stability and efficiency of CdSe/Sb2Se3 thin-film solar cells

Interfacial engineering for high efficiency solution processed Sb2Se3 solar cells