Abstract:Antimony selenosulfide, denoted as Sb2(S,Se)3, has garnered attention as an eco-friendly semiconductor candidate for thin-film photovoltaics due to its light-absorbing properties. The power conversion efficiency (PCE) of Sb2(S,Se)3 solar cells has recently increased to 10.75%, but significant challenges persist, particularly in the areas of open-circuit voltage (Voc) losses and fill factor (FF) losses. This study delves into the theoretical relationship between Voc and FF, revealing that, under conditions of low Voc and FF, internal resistance has a more pronounced effect on FF compared to non-radiative recombination. To address Voc and FF losses effectively, a phased optimization strategy was devised and implemented, paving the way for Sb2(S,Se)3 solar cells with PCEs exceeding 20%. By optimizing internal resistance, the FF loss was reduced from 10.79% to 2.80%, increasing the PCE to 12.57%. Subsequently, modifying the band level at the interface resulted in an 18.75% increase in Voc, pushing the PCE above 15%. Furthermore, minimizing interface recombination reduced Voc loss to 0.45 V and FF loss to 0.96%, enabling the PCE to surpass 20%. Finally, by augmenting the absorber layer thickness to 600 nm, we fully utilized the light absorption potential of Sb2(S,Se)3, achieving an unprecedented PCE of 26.77%. This study pinpoints the key factors affecting Voc and FF losses in Sb2(S,Se)3 solar cells and outlines an optimization pathway that markedly improves device efficiency, providing a valuable reference for further development of high-performance photovoltaic applications.

Characterization of Basic Physical Properties of Sb 2 Se 3 and Its Relevance for Photovoltaics

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub> Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb<sub>2</sub>Se<sub>3</sub>Thin Film Prepared via Magnetron Sputtering

Structure, Morphology, and Photoelectric Performances of Te-Sb 2 Se 3 Thin Film Prepared via Magnetron Sputtering.

CuSbSe2 As a Potential Photovoltaic Absorber Material: Studies from Theory to Experiment

A review of Sb2Se3 photovoltaic absorber materials and thin-film solar cells

10 Years of Sb 2 Se 3 Thin Film Solar Cells

Ten Years of Sb2Se3 Thin Film Solar Cells

Investigation of Physical and Electronic Properties of GeSe for Photovoltaic Applications

Electronic and optical properties of Sb 2 Se 3 and Sb 2 S 3 : theoretical investigations

An Optimization Path for Sb2(S,Se)3 Solar Cells to Achieve an Efficiency Exceeding 20

Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

Se-Elemental Concentration Gradient Regulation for Efficient Sb2(S,Se)3 Solar Cells With High Open-Circuit Voltages

Thermal Evaporation And Characterization Of Superstrate Cds/Sb2se3 Solar Cells

Recent Achievements in Solution Processed Antimony Selenosulfide Solar Cells

In Situ Sulfurization to Generate Sb2(Se1 − Xsx)3 Alloyed Films and Their Application for Photovoltaics

Thermally Deposited Sb2Se3/CdS-Based Solar Cell: Experimental and Theoretical Analysis

Distinctive Deep-Level Defects in Non-Stoichiometric Sb<sub>2</sub>Se<sub>3</sub> Photovoltaic Materials

Both Free and Trapped Carriers Contribute to Photocurrent of Sb 2 Se 3 Solar Cells.

Sputtered and Selenized Sb2Se3 Thin-Film Solar Cells with Open-Circuit Voltage Exceeding 500 Mv