Abstract:Gallium nitride (GaN) is a widely investigated semiconductor owing to its fascinating features suitable for a plethora of optoelectronic applications; nevertheless, high-quality growth of this material remains a challenge. In this work, the crystal quality of GaN grown by serpentine channel patterned sapphire substrates (SCPSS) is improved via introducing indium gallium nitride (InGaN) as an interlayer (IL). The closed stripes of GaN are grown by the modified design of SCPSS. Our results show that the crystal quality of GaN grown in the form of closed stripes is superior than conventionally grown counterpart. Transmission electron microscopy (TEM) revealed that the design of SCPSS controls all threading dislocations (TDs) while cathodoluminescence (CL) analysis showed that the closed stripes are relaxed and produce many TDs. Therefore, further control over the TDs was achieved by InGaN-IL. During the growth process, the temperature of GaN was reduced and 20 nm thick InGaN-IL was added at 800 degrees C. The detailed characterization of our developed samples indicated that the additional use of InGaN-IL in SCPSS is very effective for improving the crystal quality of GaN. We anticipate that our findings will improve the current understanding about the growth of high-quality GaN towards efficient optoelectronic devices.

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Enhanced performance of (112 ̄2) plane p-AlGaN grown with indium surfactant

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Effects of indium surfactant on growth and characteristics of (112¯2) plane AlGaN-based multiple quantum wells

Investigation of High Indium-Composition InGaN/GaN Heterostructures on ZnO Grown by Metallic Organic Chemical Vapor Deposition

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Influence of GaN Buffer Layer for InN Growth

Effect of Indium Droplets on Growth of InGaN Film by Molecular Beam Epitaxy

Effect of Indium-Doped Interlayer on the Strain Relief in GaN Films Grown on Si(111)

Improvement in Structural and Electrical Characteristics of Nonpolar A-Plane Si-doped N-Algan

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition

Effects of InGaN-interlayer on Closed Stripes of GaN Grown by Serpentine Channel Patterned Sapphire Substrate

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Effect Of Indium Ambient On Electrical Properties Of Mg-Doped Alxga1-Xn

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Influence of Mg source flowrate on the properties of isoelectronic in-doping p-AlGaN materials