Abstract:Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

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Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting diodes with a p-type doped quantum barrier

Hole Transport Assisted by the Piezoelectric Field in In0.4Ga0.6N/GaN Quantum Wells under Electrical Injection

Mechanism Of Hole Injection Enhancement In Light-Emitting Diodes By Inserting Multiple Hole-Reservoir Layers In Electron Blocking Layer (Vol 119, 105703, 2016)

Efficient Hole Transport in Asymmetric Coupled Ingan Multiple Quantum Wells

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High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

Injection Current Dependences of Electroluminescence Transition Energy in Ingan/Gan Multiple Quantum Wells Light Emitting Diodes under Pulsed Current Conditions (vol 118, 033101, 2015)

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

Hole Transport in C-Plane Ingan-Based Green Laser Diodes

Enhanced Hole Transport of Nonpolar InGaN-based Light-emitting Diodes with Lateral P-Type Superlattice Doping Structure

Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects

A new structure of p-GaN/InGaN heterojunction to enhance hole injection for blue GaN-based LEDs

Modified Ingan/Gan Quantum Wells with Dual-Wavelength Green-Yellow Emission

Origin of GaN-InGaN-GaN barriers in enhancing the hole injection for InGaN/GaN green light-emitting diodes

Superinjection of Holes in Homojunction Diodes Based on Wide-Bandgap Semiconductors

Revisiting Hole Injection in Quantum Dot Light‐Emitting Diodes

The Influence of InGaN Interlayer on the Performance of InGaN/GaN Quantum-Well-Based LEDs at High Injections

Enhancing hole injection by electric dipoles for efficient blue InP QLEDs