Abstract:The implantation damage build-up and optical properties of GaN epitaxial films under H-2(+) ion implantation have been investigated by a combination of Rutherford backscattering in channeling geometry, Raman spectroscopy, UV-visible spectroscopy and transmission electron microscopy. GaN epitaxial films were implanted with 134 keV H-2(+) ions to doses ranging from 3.75 x 10(16) to 1.75 x 10(17) H-2(+) cm(-2) at room temperature or the same dose of 1.5 x 10(17) H-2(+) cm(-2) at room temperature, 573 and 723 K. The dependence of lattice disorder induced by H-2(+)-implantation on the ion dose can be divided into a three-step damage process. A strong influence of the H concentration on the defect accumulation is discussed. The decrease in relative Ga disorder induced by H-2(+)-implantation is linear with increasing implantation temperature. The absorption coefficient of GaN epitaxial films increases with increasing ion dose, leading to the decrease in Raman scattering spectra of Ga-N vibration. With increasing implantation doses up to 5 x 10(16) H-2(+) cm(-2), nanoscale hydrogen bubbles are observed in the H deposition peak region. Interstitial-type dislocation loops are observed in the damaged layer located near the damage peak region, and the geometry of the dislocation loops produced by H implantation is analyzed. The surface layer is almost free of lattice disorder induced by H-2(+)-implantation.

Structures and Optical Properties of $\text{h}_{2}^{+}$ -Implanted GaN Epi-Layers

Enhanced Damage Buildup in C+-implanted GaN Film Studied by a Monoenergetic Positron Beam

Structural Properties of Ne Implanted GaN

Swelling or Erosion on the Surface of Patterned Gan Damaged by Heavy Ion Implantation

Study of Radiation Damage in Mg+-implanted GaN

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Implantation-Induced Electrical Isolation of Gaasn Epilayers Grown by Metalorganic Chemical Vapor Deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Properties of GaN film grown by hydride vapor phase epitaxy

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Unidirectional Expansion of Lattice Parameters in GaN Induced by Ion Implantation

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Structural and Magnetic Properties of Co+ Implanted N-Gan Dilute Magnetic Semiconductors

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Nano-clusters structure and magnetic properties of high fluence Mn+ ion-implanted GaN

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

Influence of Implanted Mg Concentration on Defects and Mg Distribution in GaN

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures