Abstract:Lattice-mismatched heteroepitaxy has attracted considerable attention in recent years. A great interest of these systems is the possibility of integrating devices from different materials on a single substrate. 1.3 and 1.5 μm InGaAs(P)InP laser diodes are essential for optical communication, whereas InP field effect transistor technology is less developed than that of GaAs MESFET. The performances of laser diodes are much more sensitive to a high density of disclocations, so it would be interesting to grow GaAs MESFET on InP for integration with 1.3 and 1.5 μm lasers. Due to the large difference of the thermal expansion coefficient and lattice parameter between GaAs and InP, it is very difficult to grow GaAs epilayers of high quality on it is very difficult to grow of GaAs epilayer high quality on InP substrates due to the large difference of the thermal expansion coefficient and lattice parameter between GaAs and InP. A new method, metalorganic source modulation epitaxy (MOSME), which improves the crystal quality of GaAs epilayers on InP substrates by MOVPE, has been adopted in our laboratory. The lowest full width at half maximum (FWHM) of the double crystal X-ray (DCX) diffraction spectra reaches as low as 120 arcsec for a 5 μm thick layer. Structural properties (misorientation, lattice parameters and crystal quality) of 1.0–5.0 μm thick GaAs layers grown on InP have been measured by DCX diffraction. On GaAs MESFETs grown on InP, we have measured gm = 100 ms/mm. For these transitions, the current gain cut-off frequency (Ft) is around 12 GHz and the maximum frequency of oscillation (Fmax) is higher than 30 GHz.

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Study on the growth of GaAs layer and InAs quantum dots on Ge substrate by molecular beam epitaxy

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

Nanoscale Growth of Gaas on Patterned Si(111) Substrates by Molecular Beam Epitaxy

Heteroepitaxial Growth of GaSb Interfacial Misfit Array on GaAs Substrate by Molecular Beam Epitaxy

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Molecular Beam Epitaxy of High-Quality GaAs on Si (001) by Multi-Time Thermal Cycle Annealing

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Application of SiGe bulk crystal as a substrate for strain-controlled heterostructure materials

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Heteroepitaxy Growth of GaAsBi on Ge(100) Substrate by Gas Source Molecular Beam Epitaxy

Structural Properties of GaAs on Si and Ge Substrates

Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures

Growth of GaAsInP heteromaterials and corresponding strain determination

GaAsInP heteroepitaxy and GaAsInP MESFET fabrication by MOVPE

Fabrication of High Quality GaAs-on-insulator Via Ion-Cut of Epitaxial GaAs/Ge Heterostructure

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Heteroepitaxial Growth of Ge-Rich SiGe Films on Si for Solar Cells

Metalorganic vapor phase epitaxy growth of dual junction solar cell with InGaAs/GaAsP superlattice on Ge