Abstract:We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

High Pressure Photoluminescence Studies of Carbon-Induced Germanium Quantum Dots Grown on Si

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

High-Pressure Photoluminescence Studies of Pseudomorphic Si1-yCy/Si MQW Structures

Effects of Hydrostatic Pressure on Raman Scattering in Ge Quantum Dot Superlattices

Photoluminescence of a Pseudomorphic Si1−yCy/Si MQW Structure under Pressure

Optical properties of Ge/Si quantum dot superlattices

Raman Scattering Of Ge/Si Dot Superlattices Under Hydrostatic Pressure

Systematic Studies of the Photoluminescence of Ge Quantum Dots Grown on Strained Si(0.7)Ge(0.3) Buffer Layer

Band-to-Band and Band-to-Acceptor Photoluminescence Studies in InSe under Pressure

High Pressure Photoluminescence and Raman Investigations of CdSe∕ZnS Core/shell Quantum Dots

Pressure Induced Phase Transitions of Bulk CsGeCl3 and Ultrafast Laser Pulse Induced Excited-State Properties of CsGeCl3 Quantum Dots

Pressure-Induced Photoluminescence Adjustment and Lattice Disorder in Monolayer Wse2

Photoluminescence Studies on Self-Organized 1.55-Μm InAs/InGaAsP/InP Quantum Dots under Hydrostatic Pressure

High Pressure Photoluminescence and Raman Studies of ZnxCd1−xSe Quantum Dots

Excitation intensity dependence of photoluminescence spectra of SiGe quantum dots grown on prepatterned Si substrates: Evidence for biexcitonic transition

Pressure-dependent Photoluminescence of CdSe/ZnS Quantum Dots: Critical Point of Different Pressure Regimes

Dependency of photoluminescence from SiO_2 thin films containing Si_(1-x)Ge_x quantum dots on Ge/Si doping ratio

Effects Of Hydrostatic Pressure On Raman Scattering In Ge Quantum Dots

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

Photoluminescence Up-Conversion of Cdse/Zns Core/Shell Quantum Dots under High Pressure