Abstract:Semiconductor quantum dots (QDs) are promising materials for stress/strain sensing applications owing to their pressure-dependent photoluminescence (PL) and nanoscale size, while the impact of stress and microstructure on their optical properties still awaits in-depth investigations under more realistic loading conditions. Herein, bare CuInS2 QDs and core–shell structured CuInS2/ZnS QDs are investigated under repetitive pressure loadings to elucidate the pressure-dependent PL responses over many pressure cycles. The CuInS2/ZnS QDs not only show higher PL intensity but also exhibit a reliable and simple relationship between PL emission peak energy (EPL) and external pressure (P), which is desirable for actual application in stress/strain sensing. Specifically, the EPL–P relationship of bare CuInS2 QDs changes after the first loading–unloading cycle, while the EPL–P relationship of CuInS2/ZnS QDs shows repeatable trajectories under different cycles. This research provides experimental support for designing QD-based stress/strain sensing materials and explains how the shell and surface microstructure will affect the mechanical-luminescence responses of QDs.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsanm.2c00573.Pressure-dependent fwhm of two samples under three loading–unloading cycles; PL peak energy evolution with the pressure of CuInS2 QDs obtained after the sample was left to stand for over 10 h after the first loading–unloading cycle; and molar concentration of each element in CuInS2 and CuInS2/ZnS QDs (PDF)This article has not yet been cited by other publications.

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