Photoluminescence Studies on Self-Organized 1.55-Μm InAs/InGaAsP/InP Quantum Dots under Hydrostatic Pressure

P. Y. Zhou,X. M. Dou,X. F. Wu,K. Ding,S. Luo,T. Yang,H. J. Zhu,D. S. Jiang,B. Q. Sun
DOI: https://doi.org/10.1063/1.4890013
IF: 2.877
2014-01-01
Journal of Applied Physics
Abstract:We report an experimental study on the optical properties of the self-organized 1.55-μm InAs/InGaAsP/InP quantum dots (QDs) under hydrostatic pressure up to 9.5 GPa at 10 K. The obtained pressure coefficients of emissions from InGaAsP to InAs QDs are 92 meV/GPa and 76 meV/GPa, respectively. Their photoluminescence intensities are found to decrease significantly with increasing pressure due to the pressure-induced Γ-X mixing of InGaAsP at about 8.5 GPa. The lifetime of excitonic emission from QDs decreases from about 1.15 at zero pressure to about 1.05 ns at 7.41 GPa. The wavelength of QD emission was tuned from 1.55 to 0.9 μm by applying a pressure of 8 GPa, displaying the feasibility for indirectly characterizing the individual InAs/InGaAsP/InP QDs of 1.55-μm emission (at zero pressure) under high-pressure using silicon avalanche photodiode.
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