Pressure Dependence of Photoluminescence in InxGa1 − Xas/alyga1 − Yas Strained Quantum Wells with Different Widths

ZX LIU,GH LI,HX HAN,ZP WANG
DOI: https://doi.org/10.1016/0038-1101(94)90319-0
IF: 1.916
1994-01-01
Solid-State Electronics
Abstract:A systematic investigation on the photoluminescence (PL) properties of Inx0Ga1 − xAs/AlyGa1 − yAs (x = 0.15, y = 0, 0.33) strained quantum wells (SQWs) with well widths from 1.7 to 11.0 nm has been performed at 77 K under high pressure up to 40kbar. The experimental results show that the pressure coefficients of the exciton peaks corresponding to transitions from the first conduction subband to the heavy-hole subband increase from 10.05 meV/kbar of 11.0 nm well to 10.62 meV/kbar of 1.8 nm well for In0.15Ga0.85As/GaAs SQWs. However, the corresponding pressure coefficients slightly decrease from 9.93 meV/kbar of 9.0 nm well to 9.73 meV/kbar of 1.7 nm well for In0.15Ga0.85As/Al0.33Ga0.67As SQWs. Calculations based on the Kronig-Penney model reveal that the increased or decreased barrier heights and the increased effective masses with pressure are the main reasons of the change in the pressure coefficients.
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