Photoluminescence Up-Conversion of Cdse/Zns Core/Shell Quantum Dots under High Pressure

Xianglin Li,Bingbing Liu,Zepeng Li,Quanjun Li,Yonggang Zou,Dedi Liu,Dongmei Li,Bo Zou,Tian Cui,Guangtian Zou
DOI: https://doi.org/10.1021/jp810750r
2009-01-01
Abstract:Efficient upconversion photoluminescence (UCPL) has been observed from CdSe/ZnS quantum dots excited at both visible and NIR wavelength, 633 and 830 turn, respectively. The UCPL excited at 633 nm exhibits a linear power dependence, while the UCPL excited at 830 nm shows a quadratic power dependence with an energy gain as high as 660 meV. The UCPL was studied under hydrostatic pressure up to similar to 8 GPa at room temperature compared with the pressure dependence of normal PL excited at 514 nm. Our investigation reveals that the UCPL excited at 633 and 830 nm originate from two different energy states with two different up-conversion processes. The UCPL excited at 633 nm originates from phonon populated surface states, which are not trapped to the band edge. The UCPL excited at 830 nm originates from the band edge, and two-photon absorption is the likely up-conversion excitation mechanism.
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