Abstract:The surface orientation can have profound effects on the atomic-scale processes of crystal growth, and is essential to such technologies as GaN-based light-emitting diodes and high-power electronics. We investigate the dependence of homoepitaxial growth mechanisms on the surface orientation of a hexagonal crystal using kinetic Monte Carlo simulations. To model GaN metal-organic vapor phase epitaxy, in which N species are supplied in excess, only Ga atoms on a hexagonal close-packed (HCP) lattice are considered. The results are thus potentially applicable to any HCP material. Growth behaviors on c-plane ${(0 0 0 1)}$ and m-plane ${(0 1 \overline{1} 0)}$ surfaces are compared. We present a reciprocal space analysis of the surface morphology, which allows extraction of growth mode boundaries and direct comparison with surface X-ray diffraction experiments. For each orientation we map the boundaries between 3-dimensional, layer-by-layer, and step flow growth modes as a function of temperature and growth rate. Two models for surface diffusion are used, which produce different effective Ehrlich-Schwoebel step-edge barriers, and different adatom diffusion anisotropies on m-plane surfaces. Simulation results in agreement with observed GaN island morphologies and growth mode boundaries are obtained. These indicate that anisotropy of step edge energy, rather than adatom diffusion, is responsible for the elongated islands observed on m-plane surfaces. Island nucleation spacing obeys a power-law dependence on growth rate, with exponents of -0.24 and -0.29 for m- and c-plane, respectively.

Epitaxy of M-Plane GaN on Nanoscale Patterned C-Plane Sapphire Substrates

Investigation of nanopatterned c-plane sapphire Substrates for Growths of polar and nonpolar GaN epilayers

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Surface Morphology of [112̄0]A-Plane GaN Growth by MOCVD on [11̄02]R-Plane Sapphire

A Comparative Study on the Properties of C-Plane and A-Plane GaN Epitaxial Films Grown on Sapphire Substrates by Pulsed Laser Deposition

Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Growth of A-Plane GaN Films on R-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

High-quality Nonpolara-Plane GaN Epitaxial Films Grown Onr-Plane Sapphire Substrates by the Combination of Pulsed Laser Deposition and Metal–organic Chemical Vapor Deposition

The Etching of A-Plane GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Anisotropic Structural Characteristics of (112̄0) GaN Templates and Coalesced Epitaxial Lateral Overgrown Films Deposited on (101̄2) Sapphire

Stress and Morphology of a Nonpolara-Plane GaN Layer Onr-Plane Sapphire Substrate

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Anisotropic structural characteristics of GaN templates and coalesced epitaxial lateral overgrown films deposited on sapphire

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy