Abstract:Remote epitaxy is a very promising technique for the preparation of single-crystal thin films of flexibly transferred III-V group semiconductors. However, the epilayer nucleation mechanism of remote epitaxy and the epilayer-substrate interface interactions on both sides of graphene are not well-understood. In this study, remote homo- and heteroepitaxy of GaN nucleation layers (NLs) were performed by metal organic chemical vapor deposition on GaN, sapphire (Al2O3), and AlN substrates with transferred single-layer graphene, respectively. The results show that the interface damage of SLG/GaN at high temperature is difficult for us to achieve the remote homoepitaxy of GaN. Therefore, we explored the nucleation mechanism of remote heteroepitaxy of GaN on SLG/Al2O3 and SLG/AlN substrates. Nucleation density, surface coverage, diffusion coefficient, and scaled nucleation density were used to quantify the differences in nucleation information of GaN grown on different polar substrates. Using high-resolution X-ray diffraction and high-resolution transmission electron microscopy analysis, we revealed the interfacial orientation relationship and atomic arrangement distribution between the GaN NLs and substrates on both sides of the SLG. The electrostatic potential effect and adsorption ability of the substrates were further investigated by first-principles calculations based on density functional theory, revealing the principle that the substrate polarity affects the atomic nucleation density. The partial density of states shows that there is long-range orbital hybridization of the electronic states of the substrate and adsorbed atoms in remote epitaxy, and the crystal properties of the substrate play an important role in the in-plane orientation relationship of the NL and substrate across the SLG. The abovementioned results reveal the nature of remote epitaxy and broaden the perspective for the rapid and large-area preparation of single-crystal GaN films.

The Etching of A-Plane GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Surface Morphology of Polar, Semipolar and Nonpolar Freestanding GaN after Chemical Etching

Defect-related Anisotropic Surface Micro-Structures of Nonpolar A-Plane GaN Epitaxial Films

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

High-quality Nonpolara-Plane GaN Epitaxial Films Grown Onr-Plane Sapphire Substrates by the Combination of Pulsed Laser Deposition and Metal–organic Chemical Vapor Deposition

Remote Epitaxy and Exfoliation of GaN Via Graphene

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Formation of GaN nanostructures with various morphologies by photo-assisted electroless chemical etching

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

A Comparative Study on the Properties of C-Plane and A-Plane GaN Epitaxial Films Grown on Sapphire Substrates by Pulsed Laser Deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Microstructure and Origin of Dislocation Etch Pits in Gan Epilayers Grown by Metal Organic Chemical Vapor Deposition

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Influence of substrate surface defects on the homoepitaxial growth of GaN (0001) by metalorganic vapor phase epitaxy

Long-Range Orbital Hybridization in Remote Epitaxy: the Nucleation Mechanism of GaN on Different Substrates Via Single-Layer Graphene.