Abstract:Single-crystalline nonpolar GaN epitaxial films have been successfully grown on r-plane sapphire (Al2O3) substrates by pulsed laser deposition (PLD) with an in-plane epitaxial relationship of GaN[1-100]//Al2O3[11-20]. The properties of the ~500nm-thick nonpolar GaN epitaxial films grown at temperatures ranging from 450 to 880°C are studied in detail. It is revealed that the surface morphology, the crystalline quality, and the interfacial property of as-grown ~500nm-thick nonpolar GaN epitaxial films are firstly improved and then decreased with the growth temperature changing from 450 to 880°C. It shows an optimized result at the growth temperature of 850°C, and the ~500nm-thick nonpolar GaN epitaxial films grown at 850°C show very smooth surface with a root-mean-square surface roughness of 5.5nm and the best crystalline quality with the full-width at half-maximum values of X-ray rocking curves for GaN(11-20) and GaN(10-11) of 0.8° and 0.9°, respectively. Additionally, there is a 1.7nm-thick interfacial layer existing between GaN epitaxial films and r-plane sapphire substrates. This work offers an effective approach for achieving single-crystalline nonpolar GaN epitaxial films for the fabrication of nonpolar GaN-based devices.

Growth of A-Plane GaN Films on R-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Surface Morphology of [112̄0]A-Plane GaN Growth by MOCVD on [11̄02]R-Plane Sapphire

Morphological evolution of a-GaN on r-sapphire by metalorganic chemical vapor deposition

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Surface Morphology Of [11(2)Over-Bar0] A-Plane Gan Growth By Mocvd On [1(1)Over-Bar02] R-Plane Sapphire

The Triangular Pits Eliminate of (1120) A-Plane GaN Growth by Metal-Orgamic Chemical Vapor Deposition

High-quality Nonpolara-Plane GaN Epitaxial Films Grown Onr-Plane Sapphire Substrates by the Combination of Pulsed Laser Deposition and Metal–organic Chemical Vapor Deposition

The influence of pressure on the growth of a -plane GaN on r -plane sapphire substrates by MOCVD

Morphological and Microstructural Evolution and Related Impurity Incorporation in Non-Polar A-Plane Gan Grown on R-Sapphire Substrates

The Effects of Substrate Nitridation on the Growth of Nonpolar A-Plane GaN on R-Plane Sapphire by Metalorganic Chemical Vapor Deposition

Growth of A-Plane Gan Films on R-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

The triangular pits eliminate of (11(2)over-bar0) a-plane GaN growth by metal-orgamic chemical vapor deposition

The triangular pits eliminate of (112̄0) a-plane GaN growth by metal-orgamic chemical vapor deposition

Epitaxy of M-Plane GaN on Nanoscale Patterned C-Plane Sapphire Substrates

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Comparison of Ga2O3 Films Grown on M- and R-Plane Sapphire Substrates by MOCVD

Reduction of structural defects in a -plane GaN epitaxy by use of periodic hemispherical patterns in r -plane sapphire substrates

Epitaxial growth of nonpolar GaN films on r -plane sapphire substrates by pulsed laser deposition

Particular Electrical Quality of A-Plane Gan Films Grown on R-Plane Sapphire by Metal-Organic Chemical Vapor Deposition

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates