Abstract:Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The structural and surface morphological properties are investigated by comprehensive material characterization. Phase pure \k{appa}-Ga2O3 films are successfully grown on GaN-, AlN-on sapphire, and YSZ substrates through a systematical tuning of the growth parameters including the precursor molar flow rates, chamber pressure and growth temperature, whereas the growth on c-sapphire substrates leads to a mixture of \b{eta}- and \k{appa}polymorphs of Ga2O3 under the investigated growth conditions. The influence of the crystalline structure, surface morphology and roughness of \k{appa}-Ga2O3 films grown on different substrates are investigated as a function of precursor flow rate. High resolution scanning transmission electron microscopy (HR-STEM) imaging of \k{appa}-Ga2O3 films reveals abrupt interfaces between the epitaxial film and the sapphire, GaN and YSZ substrates. The growth of single crystal orthorhombic \k{appa}Ga2O3 films is confirmed by analyzing the STEM nano-diffraction pattern. The chemical composition, surface stoichiometry, and the bandgap energies of \k{appa}-Ga2O3 thin films grown on different substrates are studied by high resolution x-ray photoelectron spectroscopy (XPS) measurements. The type-II (staggered) band alignments at three interfaces between \k{appa}-Ga2O3 and c-sapphire, AlN, and YSZ substrates are determined by XPS, with the exception of \k{appa}-Ga2O3/GaN interface, which shows type I (straddling) band alignment.

Morphological evolution of a-GaN on r-sapphire by metalorganic chemical vapor deposition

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Growth Rate and Surface Morphology as A Function of Growth Parameter for GaN MOCVD

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Surface Morphology and Composition Studies in InGaN/GaN Film Grown by MOCVD

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Morphology Evolution of MOCVD Grown GaN Epitaxial Layers on Nanopss

Characterizations of GaN Films and AlGaN/GaN Heterostructures on Vicinal Sapphire (0001) Substrates Grown by MOCVD

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates