Abstract:Numerous soluble aluminum alloys are the overriding applications in hydraulic fracturing technology applied in oil and gas field exploitation or biomaterial utilization. The solubility of aluminum alloy attributes to that of superficial hard and dense alumina film damage or broken, in such cases several representative low melting point metals addition will play a part, such as Ga, In, Sn, etc. Typically, aluminum alloys tends to be brittle due to Ga addition, while Mg element can be supposed to enhance its strength according to four representative Mg-Ga alloy intermetallic compounds, which is Mg2Ga, MgGa, Mg5Ga2 and MgGa2, respectively. In present article, the first principles calculation method was introduced to theoretically investigate the mechanical properties of the four Mg-Ga phases. The thermodynamic properties, structural stability, electronic structure, elastic properties and performance under pressure of four Mg-Ga intermetallic compounds were also investigated. Obviously, from the perspective of electronic structure, Mg is the electronic provider and Ga is the electronic acceptor in these compounds. According to the ionization degree calculation, the interaction between Mg and Ga ions in Mg5Ga2 phase is the strongest. In MgGa phase, the s-state electron energy density of Ga atom is the highest, so the s-state electron of Ga atom contributes the most to the contact potential between the grain boundary phase and the Al matrix. Therefore, the driving force of MgGa anodic dissolution has a decisive advantage which is reflected that its corrosion rate and the hydrogen production rate is the maximum. Thus the analysis of four intermetallic compounds mechanical properties, the bulk modulus B of four Mg-Ga intermetallic compounds is basically similar, indicating that they have similar compressive deformation resistance and fracture resistance. At 0 GPa, the young's modulus E and shear modulus G of Mg5Ga2 is the highest. The results show that Mg5Ga2 has the largest stiffness and plastic deformation resistance.

High Mg effective incorporation in Al-rich Al x Ga 1 - x N by periodic repetition of ultimate V/III ratio conditions

Effect of Mg on Nucleation Process of Recrystallization in Al–Mg–Si/SiCp Composite

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Incorporation of Mn in Al$_{x}$Ga$_{1-x}$N probed by x-ray absorption and emission spectroscopy, high-resolution microscopy, x-ray diffraction and first-principles calculations

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD

First-principles calculations to investigate the interfacial energy and electronic properties of Mg/AlN interface

First-principles investigation of Mg substitution for Ga on martensitic transformation, magnetism and electronic structures in Ni2MnGa

Mg incorporation induced microstructural evolution of reactively sputtered GaN epitaxial films to Mg-doped GaN nanorods

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Doping Characteristics of Mg in InGaAlP and GaP

Effect of Mg-Ga alloy intermetallic compounds on the properties of soluble aluminum alloy

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Effects of Ⅴ/Ⅲ Ratio and Cp2Mg Flow Rate on Characteristics of Non-Polar A-Plane Mg-delta-doped P-Algan Epi-Layer

Effects of V/III ratio and Cp2Mg flow rate on characteristics of non-polar a-plane Mg-delta-doped p-AlGaN epi-layer

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

First-Principles Study Of Mg Incorporation At Wurtzite Inn (0001) And (0 0 0 (1)Over-Bar) Surfaces

Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping