Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior
L. H. Dmowski,M. Baj,T. Suski,J. Przybytek,R. Czernecki,X. Wang,A. Yoshikawa,H. Lu,W. J. Schaff,D. Muto,Y. Nanishi
DOI: https://doi.org/10.1063/1.3153942
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:We measured lateral ac transport (up to 20 MHz), thermopower, as well as resistivity and Hall effect in InN:Mg samples with various Mg content. The sign of the Hall effect for all the samples was negative (electrons), however, the thermopower (α) measurements have shown the p-type sign of α for moderate Mg content—in the window centered around 1×1019 cm−3. Further overdoping with Mg yields donor type of defects and the change of thermoelectric power sign. The ac measurements performed as a function of frequency revealed that in both samples exhibiting and nonexhibiting p-type sign of thermopower, the n-type inversion layer at the surface does not prevent the electric contact to the bulk layer. Therefore we conclude that the n-type Hall effect invariably reported for all the Mg-doped samples originates from electron domination in mobility-weighted contributions of both types of carriers.