Regulating the valence level arrangement of high-Al-content AlGaN quantum wells using additional potentials with Mg doping

Shiqiang Lu,Tongchang Zheng,Ke Jiang,Xiaojuan Sun,Dabing Li,Hangyang Chen,Jinchai Li,Yinghui Zhou,Duanjun Cai,Shuping Li,Wei Lin,Junyong Kang

DOI: https://doi.org/10.1039/d1cp04303j

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:Additional potentials, including Coulomb interaction as well as orbital state coupling induced by Mg doping, are proposed to regulate the valence level arrangement of AlN/Al 0.75 Ga 0.25 N quantum wells.

chemistry, physical,physics, atomic, molecular & chemical