Abstract:As millimeter wave RF device applications expand above traditional microwave frequency bands in the global communications, automotive and Mil-Aero markets, the need to limit interconnect signal losses related to parasitic elements has never been more important. As the frequency increases, device designers are facing numerous challenges, complications, and costs when fabricating interconnects with techniques such as copper pillar bumps, wire, ribbon or wedge bonding in 3DIC packaging. Printing conformal interconnects with Aerosol Jet® direct-write technology can offer package designers and RF engineers a new approach for optimizing interconnect transitions to active die, tailoring the loss characteristics to specific application requirements and eliminating the need to compensate for high signal transmission losses. Printed interconnects can be digitally designed into the package with a variety of metallic and dielectric materials. As these interconnects are conformally printed on the 3D surface of the package, the trace length can be minimized with zero loop height, reducing parasitic inductance to active die circuitry specifically for die on board, die in trench, or die on die with pads-up packaging configurations. In this work, Aerosol Jet® printed interconnects with silver nanoparticle inks are compared with the gold microstrip transmission lines as well as traditional gold bond wires, for performance up to 110 GHz. We will share examples showcasing that the printed interconnects can have similar RF transmission performance to microstrip, with significantly lower loss than bondwires especially at high frequencies. We will also discuss design effects for Aerosol Jet® printed RF interconnects up to 110 GHz based on a set of results for different line heights with a given line width printed with a silver ink.

Application of Aerosol Jet Technology in Through-Via Interconnection for MEMS Wafer-Level Packaging

Wetting Process of Copper Filling in Through Silicon Vias

Study of a through-silicon/substrate via filling method based on the combinative effect of capillary action and liquid bridge rupture

High density and through wafer copper interconnections and solder bumps for MEMS wafer-level packaging

Aerosol Jet Printed Interconnects for Millimeter-Wave Components

Through wafer via technology for 3-D packaging

Simple through silicon interconnect via fabrication using dry filling of sub-micron Au particles for 3D MEMS

Thru-Wafer Interconnect for Soi-Mems 3d Wafer-Level Hermetic Packaging

Development & Applications of Through Wafer Interconnect Technology

A Novel Seedless TSV Process Based on Room Temperature Curing Silver Nanowires ECAs for MEMS Packaging

Research on Wafer-Level MEMS Packaging with Through-Glass Vias

Aerosol jet printing of surface acoustic wave microfluidic devices

High-temperature adaptive through-silicon via with pyrolyzed carbon via-sealing plates for packaging 3D carbon nanostructure-based devices fabricated using C-MEMS

Fully Aerosol Jet Printed Interconnects and Fill Materials for Millimeter Wave Circuits

Jet Electroforming of High-Aspect-Ratio Microcomponents by Periodically Lifting a Necked-Entrance Through-Mask

Development of conductive adhesive materials for via fill applications

Implementation of three-dimensional SOI-MEMS wafer-level packaging using through-wafer interconnections

Megasonic Enhanced Electrodeposition

3-D Integration of MEMS and CMOS Using Electroless Plated Nickel Through-MEMS-Vias

Fabrication and Characterization of Annular Copper Through-Silicon Via for Passive Interposer Applications

A wet process to etch arrayed vias for through silicon via application of 3D packaging