Abstract:In this research, a high-efficiency design method of the capacitive MEMS accelerometer is proposed. As the MEMS accelerometer has high precision and a compact structure, much research has been carried out, which mainly focused on the structural design and materials selection. To overcome the inconvenience and inaccuracy of the traditional design method, an orthogonal design and the particle swarm optimization (PSO) algorithm are introduced to improve the design efficiency. The whole process includes a finite element method (FEM) simulation, high-efficiency design, and verification. Through the theoretical analysis, the working mechanism of capacitive MEMS accelerometer is clear. Based on the comparison among the sweep calculation results of these parameters in the FEM software, four representative structural parameters are selected for further study, and they are le, nf, lf and wPM, respectively. le and lf are the length of the sensing electrode and fixed electrode on the right. nf is the number of electrode pairs, and wPM is the width of the mass block. Then, in order to reduce computation, an orthogonal design is adopted and finally, 81 experimental groups are produced. Sensitivity SV and mass Ma are defined as evaluation parameters, and structural parameters of experimental groups are imported into the FEM software to obtain the corresponding calculation results. These simulation data are imported into neural networks with the PSO algorithm. For a comprehensively accurate examination, three cases are used to verify our design method, and every case endows the performance parameters with different weights and expected values. The corresponding structural parameters of each case are given out after 24 iterations. Finally, the maximum calculation errors of SV and Ma are 1.2941% and 0.1335%, respectively, proving the feasibility of the high-efficiency design method.

Post-Cmos Selective Electroplating Technique for the Improvement of Cmos-Mems Accelerometers

Design and Application of a Metal Wet-Etching Post-Process for the Improvement of CMOS-MEMS Capacitive Sensors

Improvement of CMOS-MEMS accelerometer using the symmetric layers stacking design

A precise spacing-control method in MEMS packaging for capacitive accelerometer applications

Pick-and-place process for sensitivity improvement of the capacitive type CMOS MEMS 2-axis tilt sensor

Pure Oxide Structure for Temperature Stabilization and Performance Enhancement of Cmos-Mems Accelerometer

The High-Efficiency Design Method for Capacitive MEMS Accelerometer

A Novel Cmos Out-Of-Plane Accelerometer with Fully Differential Gap-Closing Capacitance Sensing Electrodes

Design and Fabrication Research on a Capacitive Accelerometer

On the sensitivity improvement of CMOS capacitive accelerometer

Design and implementation of an extremely large proof-mass CMOS-MEMS capacitive tilt sensor for sensitivity and resolution improvement

Warpage Study of Electrodeposited-Au Micro-Components with Ti/Au Multi-Layered Structures toward MEMS Applications

Vertically Integrated Multiple Electrode Design For Sensitivity Enhancement Of Cmos-Mems Capacitive Tactile Sensor

A Monolithic CMOS-MEMS Reconfigurable/Tunable Capacitive Accelerometer with Integrated Sensing Circuits

Cmos Interface Circuitry For A Closed-Loop Capacitive Mems Accelerometer

Monolithic Integration of Capacitive Sensors Using A Double-Side Cmos Mems Post Process

A MEMS Micro-g Capacitive Accelerometer Based on Through-Silicon-Wafer-Etching Process

Design and Fabrication of a Mems Capacitive Accelerometer Based on Double-Device-layers SOI Wafer.

Monolithic Cmos-Mems Pure Oxide Tri-Axis Accelerometers for Temperature Stabilization and Performance Enhancement

A High-Performance MEMS Accelerometer with an Improved TGV Process of Low Cost

Optimization of Thin Metal Layer Etch Process for MEMS/Sensor Application*