Design and implementation of an extremely large proof-mass CMOS-MEMS capacitive tilt sensor for sensitivity and resolution improvement

chuni chang,minghan tsai,yuchia liu,chihming sun,weileun fang
DOI: https://doi.org/10.1109/TRANSDUCERS.2011.5969190
2011-01-01
Abstract:This study employs the low temperature UV-glue dispensing and curing processes to bond a bulk block on a suspended CMOS MEMS stage to increase the proof-mass of tilt sensor. Thus, the sensitivity and resolution of CMOS MEMS capacitive-type tilt sensor are significantly improved. Such simple post-CMOS process inherits from the mature technology for packaging. In application, this study successfully demonstrates the bonding of a bulk solder ball with a tilt sensor fabricated using the standard TSMC 0.35μm 2P4M CMOS process. Measurements show the sensitivity is increased for 3.4-fold, and the resolution is improved from 1° to 0.1v, after adding the solder ball. Note that the sensitivity can be further improved by reducing the parasitic capacitance and the mismatch of sensing fingers caused by solder ball.
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