Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

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Physical Parametric Analysis of 16nm N-Channel Carbon-Nanotube Transistors for Manufacturability

N-Type Carbon-Nanotube Mosfet Device Profile Optimization For Very Large Scale Integration

Carbon Nanotube Materials for Future Integrated Circuit Applications

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Leakage Current And Bottom Gate Voltage Considerations In Developing Maximum Performance 16nm N-Channel Carbon Nanotube Transistors

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Uniform Carbon Nanotube Diameter and Nanoarray Pitch for VLSI of 16nm P-channel MOSFETs

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Substrate bias considerations for low leakage 16nm p-channel carbon nanotube transistors

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

NP dynamic CMOS resurrection with carbon nanotube field effect transistors

Uniform Diameter and Pitch Co-Design of 16nm N-Type Carbon Nanotube Channel Arrays for VLSI

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Carbon Based High Performance Doping-Free Nanoelectronic and Optoelectronic Devices

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays

Device design and optimization of CNTFETs for high-frequency applications

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Deep-Submicrometer Complementary Metal-Oxide-Semiconductor Transistors Based on Carbon Nanotube Films