Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

N-Type Carbon-Nanotube Mosfet Device Profile Optimization For Very Large Scale Integration

16nm P-type carbon nanotube MOSFET device profile optimization for high-speed

Physical Parametric Analysis of 16nm N-Channel Carbon-Nanotube Transistors for Manufacturability

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Carbon Nanotube Materials for Future Integrated Circuit Applications

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Leakage Current And Bottom Gate Voltage Considerations In Developing Maximum Performance 16nm N-Channel Carbon Nanotube Transistors

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Uniform Carbon Nanotube Diameter and Nanoarray Pitch for VLSI of 16nm P-channel MOSFETs

Uniform Diameter and Pitch Co-Design of 16nm N-Type Carbon Nanotube Channel Arrays for VLSI

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays

Substrate bias considerations for low leakage 16nm p-channel carbon nanotube transistors

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Local Silicon-Gate Carbon Nanotube Field Effect Transistors Using Silicon-On-Insulator Technology

Electrostatic Engineering of Nanotube Transistors for Improved Performance

NP dynamic CMOS resurrection with carbon nanotube field effect transistors

Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping

High performance n-type carbon nanotube field-effect transistors with chemically doped contacts

Carbon nanotube-based CMOS transistors and integrated circuits

High-Performance Carbon-Nanotube-Based Complementary Field-Effect-Transistors And Integrated Circuits With Yttrium Oxide