Abstract:Precise fabrication of semiconducting channel materials into densely-aligned uniformly parallel arrays is one prerequisite to the high-performance ultra-scaled technology nodes, in particular for carbon nanotubes (CNTs). Traditional thin-film-based approaches generally yield CNTs in irregularly-spaced bundles or with wide orientation distribution, and lack a mechanism to effectively eliminate mis-aligned CNTs from the ultra-scaled channel area. Therefore, the averaged pitch value and precision of CNT arrays, the key parameters defining lateral CNT spacing, fail to simultaneously meet all of the patterning requirements for the ultra-scaled technology nodes. Bio-fabrication is promising for patterning CNTls at a resolution beyond the existing lithographic limit. However, impacted by surface charges and sub-micron dimensions of typical bio-templates, current bio-templated electronics exhibit both poor transport performance and array uniformity smaller than 1 micron. We report precise scaling of inter-CNT pitch using a supramolecular assembly method called Spatially Hindered Integration of Nanowire Electronics (SHINE). Specifically, by using nano-trenches to align CNTs and DNA hybridization to stabilize them in place, we constructed parallel CNT arrays with uniform pitch as small as 10.4 nm, at an assembly yield over 95%. The pitch precision improves on that prepared from conventional thin-film approaches by more than two orders of magnitude. Compared to the lithography-patterned Si channels at 10 nm technology node, SHINE simultaneously provides both 70% smaller averaged pitch value and molecular-scale pitch precision in the channel area. By engineering the interfacial compositions, metal ions and surface charges that are destructive to FET performance have been excluded from the channel area without degrading CNT alignment. Under a source-to-drain voltage of -0.5 V, we demonstrate both transconductance more than 0.6 mS/μm with fast on/off switching. And the key FET performance metrics are improved by more than one order of magnitude than previous bio-templated FETs. Furthermore, we demonstrate centimeter-scale alignment of fixed-width CNT arrays. At the interface of high-performance electronics and bio-molecular self-assembly, precise bio-fabrication could provide ultra-scaled devices or circuits compatible with or sensitive to local biological environments.

Uniform Carbon Nanotube Diameter and Nanoarray Pitch for VLSI of 16nm P-channel MOSFETs

Uniform Diameter and Pitch Co-Design of 16nm N-Type Carbon Nanotube Channel Arrays for VLSI

Physical Parametric Analysis of 16nm N-Channel Carbon-Nanotube Transistors for Manufacturability

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

N-Type Carbon-Nanotube Mosfet Device Profile Optimization For Very Large Scale Integration

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Carbon Nanotube Materials for Future Integrated Circuit Applications

16nm P-type carbon nanotube MOSFET device profile optimization for high-speed

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Leakage Current And Bottom Gate Voltage Considerations In Developing Maximum Performance 16nm N-Channel Carbon Nanotube Transistors

Scaling of N-Type Field-Effect Transistors Based on Aligned Carbon Nanotube Arrays

Nonideality in Arrayed Carbon Nanotube Field Effect Transistors Revealed by High-Resolution Transmission Electron Microscopy

Substrate bias considerations for low leakage 16nm p-channel carbon nanotube transistors

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

Carbon nanotube-based CMOS transistors and integrated circuits

(Invited) DNA-Directed High-Precision Assembly of CNT FETs

Monolithic Integration of Carbon Nanotube Devices with Silicon Mos Technology

Wafer Scale Fabrication Of Carbon Nanotube Thin Film Transistors With High Yield

Recent Progress and Challenges Regarding Carbon Nanotube On-Chip Interconnects