Abstract:This study examines the trade‐off between leakage current and contact resistance in carbon nanotube (CNT) transistors, addressing the key issue by using HiPCO CNTs with bandgap = 0.85± 0.57 eV and introducing a MoOX contact doping method. Significant improvements in device performance are demonstrated, including a noteworthy increase in driving current and a reduction in contact resistance, indicating a promising future for highly scaled, low‐leakage CNT CMOS transistors. Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on‐current and off‐current tradeoff for two populations of semiconducting‐enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side‐bonded contact. A method to enhance the performance of low‐leakage CNFETs is demonstrated using sub‐monolayer self‐aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post‐fabrication with no change in electrical behaviors.

Substrate bias considerations for low leakage 16nm p-channel carbon nanotube transistors

Leakage Current And Bottom Gate Voltage Considerations In Developing Maximum Performance 16nm N-Channel Carbon Nanotube Transistors

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

N-Type Carbon-Nanotube Mosfet Device Profile Optimization For Very Large Scale Integration

16nm P-type carbon nanotube MOSFET device profile optimization for high-speed

Physical Parametric Analysis of 16nm N-Channel Carbon-Nanotube Transistors for Manufacturability

Deep Insight into Channel Engineering of Sub-3 Nm-Node P-Type Nanosheet Transistors with a Quantum Transport Model

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Substrate current verifying lateral electrical field under forward substrate biases for nMOSFETs

Investigation and Improvement of the Bias Temperature Instability in Carbon Nanotube Transistors

Gate Length Dependence of Bias Temperature Instability Behavior in Short Channel SOI MOSFETs

Electrostatic Engineering of Nanotube Transistors for Improved Performance

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Uniform Carbon Nanotube Diameter and Nanoarray Pitch for VLSI of 16nm P-channel MOSFETs

Self‐Aligned Contact Doping for Performance Enhancement of Low‐Leakage Carbon Nanotube Field Effect Transistors

Off-State Current Behaviors Of 28nm-Node Nmosfets Under Negative Gate Bias

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI Pmosfets with Al2O3/GeOx Gate Stacks

Predicted Performance Advantages of Carbon Nanotube Transistors with Doped Nanotubes as Source/Drain

Drain-engineered Carbon-Nanotube-film Field-Effect Transistors with High Performance and Ultra-Low Current Leakage