Abstract:The c-axis aligned crystalline indium-gallium-zinc-oxide field-effect transistor (CAAC-IGZO FET), exhibiting an extremely low off-state leakage current (~10−22 A/μm), has promised to be an ideal candidate for Dynamic Random Access Memory (DRAM) applications. However, the instabilities leaded by the drift of the threshold voltage in various stress seriously affect the device application. To better develop high performance CAAC-IGZO FET for DRAM applications, it’s essential to uncover the deep physical process of charge transport mechanism in CAAC-IGZO FET. In this work, by combining the first-principles calculations and nonradiative multiphonon theory, the charge trapping and emission properties in CAAC-IGZO FET have been systematically investigated. It is found that under positive bias stress, hydrogen interstitial in Al2O3 gate dielectric is probable effective electron trap center, which has the transition level (ε (+1/−1) = 0.52 eV) above Fermi level. But it has a high capture barrier about 1.4 eV and low capture rate. Under negative bias stress, oxygen vacancy in Al2O3 gate dielectric and CAAC-IGZO active layer are probable effective electron emission centers whose transition level ε (+2/0) distributed at −0.73~−0.98 eV and 0.69 eV below Fermi level. They have a relatively low emission barrier of about 0.5 eV and 0.25 eV and high emission rate. To overcome the instability in CAAC-IGZO FET, some approaches can be taken to control the hydrogen concentration in Al2O3 dielectric layer and the concentration of the oxygen vacancy. This work can help to understand the mechanisms of instability of CAAC-IGZO transistor caused by the charge capture/emission process.

Investigation of Abnormal $v_{\rm TH}/V_{\rm FB}$ Shifts under Operating Conditions in Flash Memory Cells with $ \hbox{al}_{2}\hbox{o}_{3}$ High-$\kappa$ Gate Stacks

Abnormal V TH /V FB shift caused by as-grown mobile charges in Al 2 O 3 and its impacts on Flash memory cell operations

Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells with High- $\kappa$ Interpoly Gate Dielectric Stacks

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-Kappa Intergate Dielectrics of Flash Memory Cells

LaAlO3 As Tunnel Dielectric for Low-Voltage and Low-Power P-Channel Flash Memory Free of Drain Disturb

Impacts of Annealing Conditions on the Flat Band Voltage of Alternate La2O3/Al2O3 Multilayer Stack Structures

Investigation of On-Pitch SGD Structure Induced Vth Distribution Tails Downshift in 3D NAND Flash Memory

Impact of low temperature on the TSG Vt shift during erase cycling of 3-D NAND Flash memory

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Threshold Voltage Stability Comparison In Algan/Gan Flash Mos-Hfets Utilizing Charge Trap Or Floating Gate Charge Storage

Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-Film Transistors

Improving the GeAsSe Ovonic Threshold Switching Characteristics by Carbon Buffer Layers for Ultralow Leakage Current (∼0.4 nA) and Low Drift Characteristics

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress

Investigation of a New Disturb Effect in the Aggressively Scaled Dual-Bit/Cell Split-Gate Floating-Gate Flash Cell

Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Study on the electric field modulation effect of ultrathin alumina layer

Abnormal Threshold Voltage Shift Caused by Trapped Holes under Hot-Carrier Stress in A-Igzo TFTs

Thermal Stability of HfO X -Based Resistive Memory Array: A Temperature Coefficient Study