Abstract:In this study, we propose a simple measurement technique to quantitatively measure the time taken by threshold voltage of normally-off p-GaN AlGaN/GaN HEMTs to recover from a nominal operational gate stress-induced instability. The proposed technique eliminates the requirement to perform a full transfer characteristic sweep post-stress, thereby eliminating the measurement-induced instability effect, often colluding precise recovery time measurement. The rate of recovery and extracted recovery times hold significance in empirically correlating the location of traps in the p-GaN or AlGaN barrier region causing VTH instability. The gate of the HEMT is stressed at nominal operational drive voltages 1.5 V, 2 V, and 4 V for various time intervals from 500 μs to 100 s, and the time taken for the drain current to recover to prestress levels measured at near-threshold voltage (~1.1 VTH) is measured as the threshold voltage recovery time. With increasing gate stress voltages, 2DEG gets trapped at relatively deeper trap energy levels at the AlGaN/GaN interface requiring more emission time during the process of recovery, mandating larger recovery times. At higher stress voltage of 4 V, the Schottky gate leakage current is high enough enabling injected holes to cross the AlGaN barrier and counter-compensate for the deeply trapped 2DEG, requiring relatively the same recovery times as lower stress voltages where the gate leakage is negligibly small. With increasing stress time, the amount of 2DEG trapped increases, requiring more recovery time to de-trap and beyond a certain time, saturation of the trap density occurs causing the recovery time to plateau.

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Threshold Voltage Instability of Enhancement-Mode GaN Buried <i>p</i>-Channel MOSFETs

Simulation of Charge Trapping Memory with Novel Structures

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.

Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs

Charge Trapping Gate Stack Enabled Non-Recessed Normally off AlGaN/GaN HEMT with High Threshold Voltage Stability

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Impact of Hole-Deficiency and Charge Trapping on Threshold Voltage Stability of P-Gan HEMT under Reverse-bias Stress

Bidirectional Threshold Voltage Shift and Gate Leakage in 650 V P-Gan AlGaN/GaN HEMTs: the Role of Electron-Trapping and Hole-Injection

Characterization of Transient Threshold Voltage Shifts in Enhancement- and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (Mis)-Hemts

Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Abnormal V TH /V FB shift caused by as-grown mobile charges in Al 2 O 3 and its impacts on Flash memory cell operations

Investigation of the Threshold Voltage Drift in Enhancement Mode Gan Mosfet under Negative Gate Bias Stress

Threshold voltage control by gate oxide thickness in fluorinated GaN metal-oxide-semiconductor high-electron-mobility transistors

Threshold Voltage Recovery Time Measurement Technique Post VTH Instability in Normally-Off p-Gate GaN High Electron Mobility Transistors

Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized P‐gan Gate AlGaN/GaN HEMTs