Abstract:The program and erase injection current characteristics of a NROM with SiO2 HfO2, LaAlO3 and Al2O3 as the tunnel dielectric, respectively, are studied in this paper. Due to the lower electron and hole energy barriers introduced by LaAlO3, both the program and erase injection current densities of the NROM using LaAlO3 as the tunnel dielectric are increased dramatically. The injection efficiency is also improved significantly, which indicates that the introduction of LaAlO3 call lower the operation voltage of NROM cells. We show that the bit line voltage can be reduced to 3 V for both program and erase operations of NROM cells with LaAlO3 of 5 nm and 8 nm equivalent oxide thickness (EOT). This can greatly reduce the additional circuits to generate high voltages in a nonvolatile memory chip, meanwhile maintaining sufficient program/erase (P/E) performance and reliability. Our study also shows that the drain disturb is alleviated during programming and erasing the NROM cell with the LaAlO3 tunnel dielectric due to the lower operating voltages (VBL = 3V). Hence a low-voltage low-power NROM flash memory device operation can be achieved by using LaAlO3 as the tunnel dielectric, due to the enhancement of the P/E injection current.

LaAlO3 As Tunnel Dielectric for Low-Voltage and Low-Power P-Channel Flash Memory Free of Drain Disturb

Program/erase Injection Current Characteristics of a Low-Voltage Low-Power NROM Using High-K Materials As the Tunnel Dielectric

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Memory Behavior of an Al 2 O 3 Gate Dielectric Non-Volatile Field-Effect Transistor

Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Low Voltage Program-Erasable Pd-Al2o3-Si Capacitors with Ru Nanocrystals for Nonvolatile Memory Application

Investigation of Abnormal $v_{\rm TH}/V_{\rm FB}$ Shifts under Operating Conditions in Flash Memory Cells with $ \hbox{al}_{2}\hbox{o}_{3}$ High-$\kappa$ Gate Stacks

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

A low-voltage flash memory cell utilizing the gate-injection program/erase method with a recessed channel structure

A Novel P-Channel Flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) Cell with Oxide-Nitride-Oxide (ONO) as Split Gate Channel Dielectric

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2o3/Hfo2/Al2o3 Tunnel Barrier

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application