Abstract:Because it has a wider band gap than CuInGaSe2 [CIGS], Cu(In, Ga)(S, Se)2 [CIGSS] offers significantly superior performance as a solar cell thin film than CuInGaSe2. According to earlier reports, manufacturing Cu(In, Ga)(S, Se)2 requires adding elements during the annealing process using a hydrogen sulfide partial pressure or from the vapor phase using a lengthy and difficult-to-control procedure. The CIGSS electrodeposition electrolyte in this study was comparable to the CuInGaSe2 electrodeposition electrolyte's composition. However, it added sulfur thiosulphate as a sulfur electrodeposition source, and the electrolyte's pH was maintained below 2. This method created a Cu(In, Ga)(S, Se)2 compound with the desired stoichiometry without adding elements from the vapor phase during annealing. Polarization curves for several disk rotation speeds were supplied and analyzed to improve the operational deposition parameters. The annealing procedure did not require the addition of any metal. The Energy-dispersive X-ray spectroscopy method (Epsilon 4 Energy-dispersive X-ray spectroscopy) was used to examine the compound's final composition. Lastly, the thickness and Cu(In, Ga)(S, Se)2 crystallography were measured using X-ray diffraction analysis (Filmetrics Profilm3D).

Fabrication of Cu(Inga)Se-2 Thin-Film Solar Cells Grown with Ionized Ga Source

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Fabricating Cu(In,Ga)Se2 (CIGS) Thin Films with Large Grains Based on the Quaternary CIGS Targets

13.6%-Efficient Cu(In,Ga)Se-2 Solar Cell with Absorber Fabricated by Rf Sputtering of (In,ga)(2)se-3 and Cu Se Targets

Preparation of Cu(In,Ga)Se2 Thin Film by Sputtering from Cu(In,Ga)Se2 Quaternary Target

Growth of Zn doped Cu(In, Ga)Se 2 thin films by RF sputtering for solar cell applications

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Characterization of Cu(In,Ga)Se2 Films Deposited by Single-Step Electron Beam Evaporation for Solar Cell Applications

Fabrication of Cu(In,Ga)Se-2 Thin Films from Nanoparticles by Non-Vacuum Mechanochemical Method and Rapid Thermal Annealing Process

Fabrication of Zn‐doped Cu(In,Ga)Se2 Thin Film Solar Cells Prepared by Zn Diffusion from the Gas Phase Using Dimethylzinc

Synthesis and Characteristics of Cu(In,Ga)Se2 Thin Films from Nanoparticles by Solvothermal Method and Selenisation Process

10.3%-Efficient Submicron-Thick Cu(In,Ga)Se2 Solar Cells with Absorber Fabricated by Sputtering In2Se3, CuGaSe2 and Cu2Se Targets

Synthesis and Characterization of CIGS Powder

Metal Precursor with Bi-Layer Indium for Cu(In,Ga)Se2 Thin Film Preparation

Efficiency improvement of electrodeposition-processed Cu(In,Ga)Se2 solar cell with widen surface bandgap by spin-coating In2S3 thin film

Ga2Se3 Treatment of Cu-rich CIGS Thin Films to Fabricate Cu-poor CIGS Thin Films with Large Grains and U-shaped Ga Distribution

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Cu(In, Ga)(S, Se)2 electrodeposition and characterizations using improved electrolytes

Modified co-evaporation process for fabrication of 4 cm × 4 cm large area flexible CIGS thin film solar cells on polyimide substrate

Preparation and Characterization of Electrodeposited-Annealed CuInSe2 Thin Films for Solar Cells