SU-8 enhanced high power density MEMS inductors

Mingliang Wang,Ngo, K.D.T.,Huikai Xie
DOI: https://doi.org/10.1109/IECON.2008.4758379
2008-01-01
Abstract:Monolithic integration of DC-DC converters with on-chip inductors has emerged as a viable means to reduce size and increase transient performance for portable electronics applications. High-power-density inductors have been recognized as a barrier for such integration. In this paper, a CMOS-compatible process that is capable of fabricating on-chip inductors with low DC resistance and high power density is developed. A unique silicon molding technique is used to obtain thick electroplating layers for cores and windings. SU-8 is used as the isolation material between windings and cores. A pot-core inductor with a low-frequency inductance of 134 nH and a dc resistance of 9.1 mOmega has been demonstrated.
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