Abstract:Researchers have been developing 2D materials (2DM) for electronics, which are widely considered a possible replacement for silicon in future technology. Two-dimensional transition metal dichalcogenides are the most promising among the different materials due to their electronic performance and relatively advanced development. Although field-effect transistors (FETs) based on 2D transition metal dichalcogenides have been found to outperform Si in ultrascaled devices, the comparison of 2DM-based and Si-based technologies at the circuit level is still missing. Here we compare 2DM- and Si FET-based static random-access memory (SRAM) circuits across various technology nodes from 16 nm to 1 nm and reveal that the 2DM-based SRAM exhibits superior performance in terms of stability, operating speed and energy efficiency when compared with Si SRAM. This study utilized technology computer-aided design to conduct device and circuit simulations, employing calibrated MoS 2 nFETs and WSe 2 pFETs. It incorporated layout design rules across various technology nodes to comprehensively analyse their SRAM functionality. The results show that, compared with three-dimensional structure Si transistors at 1 nm node, the planar 2DMFETs exhibited lower capacitance, leading to reduced cell read access time (−16%), reduced time to write (−72%) and lowered dynamic power (−60%). The study highlights the provisional benefits of using planar 2DM transistors to mitigate the performance degradation caused by reduced metal pitch and increased wire resistance in advanced nodes, potentially opening up exciting possibilities for high-performance and low-power circuit applications.

Impact of Random Dopant Fluctuation on Bulk CMOS 6-T SRAM Scaling

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Impact of Random Dopant Fluctuation Effect on Surrounding Gate MOSFETs: from Atomic Level Simulation to Circuit Performance Evaluation.

Impact of random discrete dopant in extension induced fluctuation in gate–source/drain underlap FinFET

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Numerical Study on Effects of Random Dopant Fluctuation in Double Gate Tunneling FET

Variation-aware analysis of buried-channel-array transistors (BCATs) in scaled DRAM: insights from 3D quasi-atomistic simulations

Large-Scale SRAM Variability Characterization in 45 nm CMOS

Variability Induced by Line Edge Roughness in Double-Gate Dopant-Segregated Schottky MOSFETs

Experimental investigation and design optimization guidelines of characteristic variability in silicon nanowire CMOS technology

The impact of line edge roughness on the stability of a FinFET SRAM

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal–Oxide–Semiconductor Field-Effect Transistors

Process optimization for random threshold voltage variation reduction in nanoscale MOSFET by 3D simulation

Influence of Fin Width on Single Event-Upset Characteristics of FinFET SRAM

Characteristic Variations Induced by Random Fluctuation of Source/Drain Lateral Distribution Dopant in Nano-Scale UTB SOI MOSFET

Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

2D Materials-Based Static Random-Access Memory

A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology

Investigation of process variation in vertically stacked gate-all-around nanowire transistor and SRAM circuit

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays